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| 型号： | MCP1640T-I/MC |
| 厂商： | Microchip Technology |
| 文件页数： | 3/32页 |
| 文件大小： | 0K |
| 描述： | IC REG BOOST SYNC ADJ 0.1A 8DFN |
| 标准包装： | 3,300 |
| 类型： | 升压（升压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 2 V ~ 5.5 V |
| 输入电压： | 0.8 V ~ 5.5 V |
| 频率 - 开关： | 500kHz |
| 电流 - 输出： | 100mA |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VFDFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
| 供应商设备封装： | 8-DFN（3x2） |
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MCP1640/B/C/D
1.0
ELECTRICAL
? Notice: Stresses above those listed under “Maximum
CHARACTERISTICS
Absolute Maximum Ratings ?
EN, FB, V IN, V SW , V OUT - GND ........................... +6.5V
EN, FB ...........<greater of V OUT or V IN > (GND - 0.3V)
Output Short Circuit Current....................... Continuous
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Output Current Bypass Mode........................... 400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature .........................-65 o C to +150 o C
Ambient Temp. with Power Applied......-40 o C to +85 o C
Operating Junction Temperature........-40 o C to +125 o C
ESD Protection On All Pins:
HBM........................................................ 3 kV
MM........................................................ 300 V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, V IN = 1.2V, C OUT = C IN = 10 μF, L = 4.7 μH, V OUT = 3.3V, I OUT = 15 mA,
T A = +25°C.
Boldface specifications apply over the T A range of -40 o C to +85 o C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Characteristics
Minimum Startup Voltage
Minimum Input Voltage After
V IN
V IN
—
—
0.65
0.35
0.8
—
V
V
Start-Up
Output Voltage Adjust Range
Maximum Output Current
V OUT
I OUT
2.0
100
150
150
350
5.5
—
—
—
V
mA
mA
mA
1.2V V IN , 2.0V V OUT
1.5V V IN , 3.3V V OUT
3.3V V IN , 5.0V V OUT
Feedback Voltage
Feedback Input Bias Current
Quiescent Current – PFM
V FB
I VFB
I QPFM
1.175
—
—
1.21
10
19
1.245
—
30
V
pA
μA
—
—
Measured at V OUT = 4.0V;
Mode
EN = V IN , I OUT = 0 mA;
Quiescent Current – PWM
I QPWM
—
220
—
μA
Measured at V OUT ; EN = V IN
Mode
Quiescent Current – Shutdown
I QSHDN
—
0.7
2.3
μA
V OUT = EN = GND;
Includes N-Channel and
P-Channel Switch Leakage
NMOS Switch Leakage
I NLK
—
0.3
1
μA
V IN = V SW = 5V;
V OUT = 5.5V
V EN = V FB = GND
PMOS Switch Leakage
I PLK
—
0.05
0.2
μA
V IN = VS W = GND;
V OUT = 5.5V
NMOS Switch ON Resistance
R DS(ON)N
—
0.6
—
?
V IN = 3.3V, I SW = 100 mA
Note 1:
2:
3:
4:
5:
3.3 K ? resistive load, 3.3V OUT (1 mA).
For V IN > V OUT , V OUT will not remain in regulation.
I Q is measured from V OUT ; V IN quiescent current will vary with boost ratio. V IN quiescent current can be
estimated by: (I QPFM * (V OUT /V IN )), (I QPWM * (V OUT /V IN )).
220 ? resistive load, 3.3V OUT (15 mA).
Peak current limit determined by characterization, not production tested.
? 2011 Microchip Technology Inc.
DS22234B-page 3
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