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| 型号： | MCP1650DM-LED1 |
| 厂商： | Microchip Technology |
| 文件页数： | 5/28页 |
| 文件大小： | 0K |
| 描述： | BOARD DEMO FOR MCP165X |
| 标准包装： | 1 |
| 输出及类型： | 1，非隔离 |
| 特点： | 可调光 |
| 输入电压： | 2 ~ 4.5 V |
| 已供物品： | 板 |
| 已用 IC / 零件： | MCP1651 |
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MCP1650/51/52/53
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
Absolute Maximum Ratings ?
V IN TO GND........................................................... 6.0V
CS,FB,LBI,LBO,SHDN,PG,EXT............ GND – 0.3V to
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
V IN + 0.3V
Current at EXT pin ................................................ ±1A
Storage temperature .......................... -65°C to +150°C
Operating Junction Temperature........ -40°C to +125°C
ESD protection on all pins ........................... ≥ 4 kV HBM
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply at V IN = +2.7V to +5.5V, SHDN = High,
T J = -40°C to +125°C. Typical values apply for V IN = 3.3V, T A +25°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Characteristics
Supply Voltage
V IN
2.7
—
5.5
V
Undervoltage Lockout
(S Option)
Under Voltage Lockout
(R Option)
Undervoltage Hysteresis
Shutdown Supply Current
Quiescent Supply Current
Soft Start Time
UVLO
UVLO
UVLO HYST
I SHD
I Q
T SS
2.4
1.85
—
—
—
—
2.55
2.0
117
0.001
120
500
2.7
2.15
—
1
220
—
V
V
mV
μA
μA
μs
V IN rising edge
V IN rising edge
SHDN = GND
EXT = Open
Feedback Characteristics
Feedback Voltage
Feedback Comparator
Hysteresis
Feedback Input Bias Current
V FB
V HYS
I FBlk
1.18
—
-50
1.22
12
—
1.26
23
50
V
mV
nA
All conditions
V FB < 1.3V
Current Sense Input
Current Sense Threshold
Delay from Current Sense to
Output
I SNS-TH
T dly_ISNS
75
—
114
80
155
—
mV
ns
Ext Drive
EXT Driver ON Resistance
(High Side)
EXT Driver ON Resistance
(Low Side)
R HIGH
R LOW
—
—
8
4
18
12
?
?
Oscillator Characteristics
Switching Frequency
F OSC
650
750
850
kHz
Low Duty Cycle Switch-Over
Voltage
Duty Cycle Switch Voltage
Hysteresis
Low Duty Cycle
High Duty Cycle
V LowDuty
DC Hyst
DC LOW
DC HIGH
—
—
50
72
3.8
92
56
80
—
—
62
88
V
mV
%
%
V IN rising edge
? 2004 Microchip Technology Inc.
DS21876A-page 5
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