参数资料
型号: MCP1703AT-3302E/MB
厂商: Microchip Technology
文件页数: 15/30页
文件大小: 0K
描述: IC REG LDO 3.3V .25A SOT-89-3
标准包装: 1,000
稳压器拓扑结构: 正,固定式
输出电压: 3.3V
输入电压: 最高 16V
电压 - 压降(标准): 0.525V @ 250mA
稳压器数量: 1
电流 - 输出: 250mA(最小)
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: TO-243AA
供应商设备封装: SOT-89-3
包装: 带卷 (TR)
MCP1703A
6.3
Voltage Regulator
Junction Temperature Estimate
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
6.3.1
POWER DISSIPATION EXAMPLE
T J = T JRISE + T A(MAX)
T J = 91.3°C
Package
Package Type: SOT-23A
Input Voltage:
V IN = 2.7V to 4.8V
LDO Output Voltages and Currents
V OUT = 1.8V
I OUT = 50 mA
Maximum Ambient Temperature
T A(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(V IN to V OUT ).
Maximum Package Power Dissipation at +40°C
Ambient Temperature Assuming Minimal Copper
Usage.
SOT-23A (336.0°C/Watt = R θ JA )
P D(MAX) = (+125°C - 40°C) / 336°C/W
P D(MAX) = 253 milli-Watts
SOT-89 (153.3°C/Watt = R θ JA )
P D(MAX) = (+125°C - 40°C) / 153.3°C/W
P D(MAX) = 0.554 Watts
SOT-223 (62.9°C/Watt = R θ JA )
P D(MAX) = (+125°C - 40°C) / 62.9°C/W
P D(MAX) = 1.35 Watts
P LDO(MAX) = (V IN(MAX) - V OUT(MIN) ) x I OUT(MAX)
6.4
Voltage Reference
P LDO = (4.8V - (0.97 x 1.8V)) x 50 mA
P LDO = 152.7 milli-Watts
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (R θ JA ) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
The MCP1703A can be used not only as a regulator,
but also as a low quiescent current voltage reference.
In many microcontroller applications, the initial
accuracy of the reference can be calibrated using
production test equipment or by using a ratio
measurement. When the initial accuracy is calibrated,
the thermal stability and line regulation tolerance are
the only errors introduced by the MCP1703A LDO. The
low-cost, low quiescent current and small ceramic
output capacitor are all advantages when using the
MCP1703A as a voltage reference.
Ratio Metric Reference
C OUT
1 μF
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application” (DS00792), for more information regarding
this subject.
2 μA Bias
C IN
1 μF
MCP1703A
V IN
V OUT
GND
PIC ?
Microcontroller
V REF
ADO
AD1
T J(RISE) = P TOTAL x R θ JA
T JRISE = 152.7 milli-Watts x 336.0°C/Watt
Bridge Sensor
T JRISE = 51.3°C
? 2012 Microchip Technology Inc.
FIGURE 6-2:
Voltage Reference.
Using the MCP1703A as a
DS25122A-page 15
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