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| 型号： | MCP1703T-2802E/DB |
| 厂商： | Microchip Technology |
| 文件页数： | 3/32页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 2.8V .25A SOT223-3 |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 2.8V |
| 输入电压： | 最高 16V |
| 电压 - 压降（标准）： | 0.625V @ 250mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 250mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 667 (CN2011-ZH PDF) |
| 其它名称： | MCP1703T-2802E/DBDKR |
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MCP1703
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
V DD ..................................................................................+18V
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
All inputs and outputs w.r.t. .............(V SS -0.3V) to (V IN +0.3V)
Peak Output Current ...................................................500 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
ESD protection on all pins (HBM;MM) ............... ≥ 4 kV; ≥ 400V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for V IN = V OUT(MAX) + V DROPOUT(MAX) , Note 1 ,
I LOAD = 100 μA, C OUT = 1 μF (X7R), C IN = 1 μF (X7R), T A = +25°C.
Boldface type applies for junction temperatures, T J ( Note 7 ) of -40°C to +125°C.
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Input / Output Characteristics
Input Operating Voltage
Input Quiescent Current
Maximum Output Current
Output Short Circuit Current
V IN
I q
I OUT_mA
I OUT_SC
2.7
—
250
50
100
150
200
—
—
2.0
—
100
130
200
250
400
16.0
5
—
—
—
—
—
—
V
μA
mA
mA
mA
mA
mA
mA
I L = 0 mA
For V R ≥ 2.5V
For V R < 2.5V, V IN ≥ 2.7V
For V R < 2.5V, V IN ≥ 2.95V
For V R < 2.5V, V IN ≥ 3.2V
For V R < 2.5V, V IN ≥ 3.45V
V IN = V IN(MIN) ( Note 1 ) , V OUT = GND,
Current (average current) measured
10 ms after short is applied.
Output Voltage Regulation
V OUT
V R -3.0% V R ±0.4%
V R +3.0%
V
V R -2.0% V R ±0.4%
V R +2.0%
V
V R -1.0% V R ±0.4%
V R +1.0%
V
1% Custom
V OUT Temperature Coefficient
Line Regulation
Load Regulation
TCV OUT
Δ V OUT /
(V OUT X Δ V IN )
Δ V OUT /V OUT
—
-0.3
-2.5
50
±0.1
±1.0
—
+0.3
+2.5
ppm/°C
%/V
%
(V OUT(MAX) + V DROPOUT(MAX) ) ≤ V IN
I L = 1.0 mA to 250 mA for V R >= 2.5V
I L = 1.0 mA to 200 mA for V R < 2.5V
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V IN must meet two conditions: V IN ≥ 2.7V and V IN ≥ (V OUT(MAX) + V DROPOUT(MAX) ).
V R is the nominal regulator output voltage. For example: V R = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage V IN = V OUT(MAX) + V DROPOUT(MAX) or Vi IN = 2.7V (whichever is greater); I OUT = 100 μA.
TCV OUT = (V OUT-HIGH - V OUT-LOW ) *10 6 / (V R * Δ Temperature), V OUT-HIGH = highest voltage measured over the
temperature range. V OUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV OUT .
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V OUT(MAX) + V DROPOUT(MAX) or 2.7V, whichever is greater.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T A , T J , θ JA ). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
? 2011 Microchip Technology Inc.
DS22049F-page 3
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