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| 型号： | MCP1703T-3002E/DB |
| 厂商： | Microchip Technology |
| 文件页数： | 14/32页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3V .25A SOT-223-3 |
| 标准包装： | 4,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3V |
| 输入电压： | 最高 16V |
| 电压 - 压降（标准）： | 0.625V @ 250mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 250mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 带卷 (TR) |
| 其它名称： | MCP1703T-3002E/DBTR |
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MCP1703
6.0
6.1
APPLICATION CIRCUITS &
ISSUES
Typical Application
EQUATION 6-2:
T J ( MAX ) = P TOTAL × R θ JA + T AMAX
Where:
The MCP1703 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
T J(MAX)
P TOTAL
R θ JA
=
=
=
Maximum continuous junction
temperature
Total device power dissipation
Thermal resistance from
junction-to-ambient
MCP1703
T AMAX
=
Maximum ambient temperature
V OUT
1.8V
I OUT
50 mA
GND
V OUT
C OUT
1 μF Ceramic
V IN
V IN
2.7V to 4.8V
C IN
1 μF Ceramic
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
FIGURE 6-1:
Typical Application Circuit.
EQUATION 6-3:
R θ JA
6.1.1
APPLICATION INPUT CONDITIONS
Package Type = SOT-23A
( T J ( MAX ) – T A ( MAX ) )
P D ( MAX ) = ---------------------------------------------------
Input Voltage Range = 2.7V to 4.8V
Where:
V IN maximum = 4.8V
V OUT typical = 1.8V
I OUT = 50 mA maximum
P D(MAX)
T J(MAX)
=
=
Maximum device power dissipation
Maximum continuous junction
temperature
6.2
6.2.1
Power Calculations
POWER DISSIPATION
T A(MAX)
R θ JA
=
=
Maximum ambient temperature
Thermal resistance from
junction-to-ambient
The internal power dissipation of the MCP1703 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(2.0 μA x V IN ). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-4:
T J ( RISE ) = P D ( MAX ) × R θ JA
Where:
EQUATION 6-1:
T J(RISE)
=
Rise in device junction temperature
over the ambient temperature
P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) )
Where:
P LDO
=
LDO Pass device internal power
P TOTAL
R θ JA
=
=
Maximum device power dissipation
Thermal resistance from junction to
ambient
dissipation
V IN(MAX)
V OUT(MIN)
=
=
Maximum input voltage
LDO minimum output voltage
EQUATION 6-5:
T J = T J ( RISE ) + T A
Where:
The maximum continuous operating junction
temperature specified for the MCP1703 is +125 ° C . To
estimate the internal junction temperature of the
MCP1703, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R θ JA ). The thermal resistance from junction to
T J
T J(RISE)
T A
=
=
=
Junction temperature
Rise in device junction temperature
over the ambient temperature
Ambient temperature
ambient for the SOT-23A pin package is estimated at
336 ° C/W.
DS22049F-page 14
? 2011 Microchip Technology Inc.
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