参数资料
型号: MCP1703T-3002E/DB
厂商: Microchip Technology
文件页数: 4/32页
文件大小: 0K
描述: IC REG LDO 3V .25A SOT-223-3
标准包装: 4,000
稳压器拓扑结构: 正,固定式
输出电压: 3V
输入电压: 最高 16V
电压 - 压降(标准): 0.625V @ 250mA
稳压器数量: 1
电流 - 输出: 250mA(最小)
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223-3
包装: 带卷 (TR)
其它名称: MCP1703T-3002E/DBTR
MCP1703
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V IN = V OUT(MAX) + V DROPOUT(MAX) , Note 1 ,
I LOAD = 100 μA, C OUT = 1 μF (X7R), C IN = 1 μF (X7R), T A = +25°C.
Boldface type applies for junction temperatures, T J ( Note 7 ) of -40°C to +125°C.
Parameters
Dropout Voltage
Symbol
V DROPOUT
Min
Typ
330
525
625
750
Max
650
725
975
1100
Units
mV
mV
mV
mV
mV
Conditions
I L = 250 mA, V R = 5.0V
I L = 250 mA, 3.3V ≤ V R < 5.0V
I L = 250 mA, 2.8V ≤ V R < 3.3V
I L = 250 mA, 2.5V ≤ V R < 2.8V
V R < 2.5V, See Maximum Output
Current Parameter
Output Delay Time
T DELAY
1000
μs
V IN = 0V to 6V, V OUT = 90% V R ,
R L = 50 Ω resistive
Output Noise
e N
8
μV/(Hz) 1/2 I L = 50 mA, f = 1 kHz, C OUT = 1 μF
Power Supply Ripple
PSRR
44
dB f = 100 Hz, C OUT = 1 μF, I L = 100 μA,
Rejection Ratio
V INAC = 100 mV pk-pk, C IN = 0 μF,
V R = 1.2V
Thermal Shutdown Protection
T SD
150
°C
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V IN must meet two conditions: V IN ≥ 2.7V and V IN ≥ (V OUT(MAX) + V DROPOUT(MAX) ).
V R is the nominal regulator output voltage. For example: V R = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage V IN = V OUT(MAX) + V DROPOUT(MAX) or Vi IN = 2.7V (whichever is greater); I OUT = 100 μA.
TCV OUT = (V OUT-HIGH - V OUT-LOW ) *10 6 / (V R * Δ Temperature), V OUT-HIGH = highest voltage measured over the
temperature range. V OUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV OUT .
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V OUT(MAX) + V DROPOUT(MAX) or 2.7V, whichever is greater.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T A , T J , θ JA ). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS ( 1 )
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
T J
T J
T A
-40
-65
+125
+150
+150
°C
°C
°C
Steady State
Transient
Thermal Package Resistance ( Note 2 )
Thermal Resistance, 3LD SOT-223
Thermal Resistance, 3LD SOT-23A
Thermal Resistance, 3LD SOT-89
Thermal Resistance, 8LD 2x3 DFN
θ JA
θ JC
θ JA
θ JC
θ JA
θ JC
θ JA
θ JC
62
15
336
110
153,3
100
93
26
°C/W
°C/W
°C/W
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Note 1:
2:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T A , T J , θ JA ). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging
information.
DS22049F-page 4
? 2011 Microchip Technology Inc.
相关PDF资料
PDF描述
RCB35DHFD CONN EDGECARD 70POS .050 SMD
EBM43DRAN CONN EDGECARD 86POS R/A .156 SLD
HCC22DRTN CONN EDGECARD 44POS DIP .100 SLD
UTM1H4R7MPD CAP ALUM 4.7UF 50V 20% RADIAL
HBC40DREH-S93 CONN EDGECARD 80POS .100 EYELET
相关代理商/技术参数
参数描述
MCP1703T-3302E/CB 功能描述:低压差稳压器 - LDO Low Iq 250mA LDO Vin 16V maxVout 3.3V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
MCP1703T-3302E/DB 功能描述:低压差稳压器 - LDO Low Iq 250mA LDO Vin 16V maxVout 3.3V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
MCP1703T-3302E/MB 功能描述:低压差稳压器 - LDO Low Iq 250mA LDO Vin 16V maxVout 3.3V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
MCP1703T-3302E/MC 功能描述:低压差稳压器 - LDO Low Iq 250mA LDO Vin 16V Vout=1.2V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
MCP1703T-3602E/CB 功能描述:低压差稳压器 - LDO RoHS:否 制造商:Microchip Technology 最大输入电压:16 V 输出电压:3.6 V 回动电压(最大值):1100 mV 输出电流:200 mA 负载调节:2.5 % 输出端数量:1 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-3