参数资料
型号: MCP1725T-2502E/SN
厂商: Microchip Technology
文件页数: 21/32页
文件大小: 0K
描述: IC REG LDO 2.5V .5A 8SOIC
产品培训模块: High Current LDOs
标准包装: 3,300
稳压器拓扑结构: 正,固定式
输出电压: 2.5V
输入电压: 最高 6V
电压 - 压降(标准): 0.21V @ 500mA
稳压器数量: 1
电流 - 输出: 500mA(最小)
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
其它名称: MCP1725T-2502E/SNTR
MCP1725
The maximum power dissipation capability for a
5.3
Typical Application
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. Equation 5-4 can be
used to determine the package maximum internal
power dissipation.
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
is calculated in the following example. The power dissi-
pation as a result of ground current is small enough to
be neglected.
R θ JA
EQUATION 5-4:
( T J ( MAX ) – T A ( MAX ) )
P D ( MAX ) = ---------------------------------------------------
EXAMPLE 5-1:
Package
POWER DISSIPATION
EXAMPLE
P D(MAX) = Maximum device power dissipation
Package
=
2x3 DFN
T J(MAX) = maximum continuous junction
temperature
T A(MAX) = maximum ambient temperature
R θ JA = Thermal resistance from junction to
ambient
EQUATION 5-5:
T J ( RISE ) = P D ( MAX ) × R θ JA
T J(RISE) = Rise in device junction temperature
over the ambient temperature
P D(MAX) = Maximum device power dissipation
R θ JA = Thermal resistance from junction to
ambient
Type
Input Voltage
V IN = 3.3V ± 5%
LDO Output Voltage and Current
V OUT = 2.5V
I OUT = 0.5A
Maximum Ambient Temperature
T A(MAX) = 60°C
Internal Power Dissipation
P LDO(MAX) = (V IN(MAX) – V OUT(MIN) ) x
I OUT(MAX)
P LDO = ((3.3V x 1.05) – (2.5V x 0.975))
x 0.5A
P LDO = 0.51 Watts
EQUATION 5-6:
5.3.1
DEVICE JUNCTION TEMPERATURE
T J = T J ( RISE ) + T A
T J = Junction temperature
T J(RISE) = Rise in device junction temperature
over the ambient temperature
T A = Ambient temperature
RISE
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction-to-ambient for the application. The
thermal resistance from junction-to-ambient (R θ JA ) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface-mount packages.
The EIA/JEDEC specification is JESD51-7 “High
Effective Thermal Conductivity Test Board for Leaded
Surface-Mount Packages” . The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an Appli-
cation” (DS00792), for more information regarding this
subject.
? 2007 Microchip Technology Inc.
T J(RISE)
T JRISE
T JRISE
=
=
=
P TOTAL x R θ JA
0.51 W x 76.0 ° C/W
38.8 ° C
DS22026B-page 21
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MCP1725T-3302E/MC 功能描述:低压差稳压器 - LDO 500mA CMOS LDO Vout=3.3V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
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MCP1725T-5002E/MC 功能描述:低压差稳压器 - LDO 500mA CMOS LDO Vout=5.0V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20