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| 型号： | MCP1801T-0902I/OT |
| 厂商： | Microchip Technology |
| 文件页数： | 18/28页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 0.9V .15A SOT23-5 |
| 标准包装： | 3,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 0.9V |
| 输入电压： | 2 V ~ 10 V |
| 稳压器数量： | 1 |
| 电流 - 输出： | 150mA（最小） |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | SOT-23-5 |
| 包装： | 带卷 (TR) |
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MCP1801
EQUATION 6-5:
T J = T J ? RISE ? + T A
Where:
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
T J
T J(RISE)
T A
=
=
=
Junction Temperature
Rise in device junction
temperature over the ambient
temperature
Ambient temperature
thermal resistance from junction to ambient (R ? JA ) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
6.3
Voltage Regulator
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application” , (DS00792), for more information
regarding this subject.
6.3.1
POWER DISSIPATION EXAMPLE
T J(RISE) = P TOTAL x Rq JA
Package
Package Type: SOT-23-5
Input Voltage
V IN = 2.4V to 5.0V
LDO Output Voltages and Currents
V OUT = 1.8V
I OUT = 50 mA
Maximum Ambient Temperature
T A(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(V IN to V OUT ).
P LDO(MAX) = (V IN(MAX) - V OUT(MIN) ) x I OUT(MAX)
P LDO = (5.0V - (0.98 x 1.8V)) x 50 mA
P LDO = 161.8 milli-Watts
DS22051D-page 18
T JRISE = 161.8 milli-Watts x 256.0 ° C/Watt
T JRISE = 41.42 ° C
? 2010 Microchip Technology Inc.
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