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参数资料
| 型号： | MCP1825S-3302E/AB |
| 厂商： | Microchip Technology |
| 文件页数： | 21/38页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V .5A TO220-3 |
| 产品培训模块： | High Current LDOs |
| 标准包装： | 50 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3.3V |
| 输入电压： | 最高 6V |
| 电压 - 压降（标准）： | 0.21V @ 500mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 500mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
| 产品目录页面： | 666 (CN2011-ZH PDF) |
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MCP1825/MCP1825S
The maximum power dissipation capability for a
5.3
Typical Application
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. Equation 5-4 can be
used to determine the package maximum internal
power dissipation.
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
is calculated in the following example. The power
dissipation as a result of ground current is small
enough to be neglected.
( T J ( MAX ) – T A ( MAX ) )
R θ JA
EQUATION 5-4:
P D ( MAX )
= ---------------------------------------------------
5.3.1
Package
POWER DISSIPATION EXAMPLE
Package Type = TO-220-5
P D(MAX) = Maximum device power dissipation
T J(MAX) = maximum continuous junction
temperature
T A(MAX) = maximum ambient temperature
R θ JA = Thermal resistance from junction-to-
ambient
EQUATION 5-5:
T J ( RISE ) = P D ( MAX ) × R θ JA
T J(RISE) = Rise in device junction temperature
over the ambient temperature
P D(MAX) = Maximum device power dissipation
Input Voltage
V IN = 3.3V ± 5%
LDO Output Voltage and Current
V OUT = 2.5V
I OUT = 500 mA
Maximum Ambient Temperature
T A(MAX) = 60°C
Internal Power Dissipation
P LDO(MAX) = (V IN(MAX) – V OUT(MIN) ) x I OUT(MAX)
P LDO = ((3.3V x 1.05) – (2.5V x 0.975))
x 500 mA
P LDO = 0.514 Watts
R θ JA = Thermal resistance from junction-to-
ambient
5.3.1.1
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
EQUATION 5-6:
T J = T J ( RISE ) + T A
T J = Junction temperature
T J(RISE) = Rise in device junction temperature
over the ambient temperature
T A = Ambient temperature
? 2008 Microchip Technology Inc.
from junction-to-ambient for the application. The
thermal resistance from junction-to-ambient (R θ JA ) is
derived from EIA/JEDEC standards for measuring
thermal resistance. The EIA/JEDEC specification is
JESD51. The standard describes the test method and
board specifications for measuring the thermal
resistance from junction to ambient. The actual thermal
resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application” (DS00792), for more information regarding
this subject.
T J(RISE) = P TOTAL x R θ JA
T JRISE = 0.514 W x 29.3° C/W
T JRISE = 15.06°C
DS22056B-page 21
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| MCP1825S-5002E/AB | 功能描述:低压差稳压器 - LDO 500 mA CMOS LDO Vout 5.0V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1825S-5002E/DB | 功能描述:低压差稳压器 - LDO 500 mA CMOS LDO Vout 5.0V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1825S-5002E/EB | 功能描述:低压差稳压器 - LDO 500 mA CMOS LDO Vout 5.0V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1825ST-0802E/DB | 功能描述:低压差稳压器 - LDO 500 mA CMOS LDO Vout 0.8V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1825ST-0802E/EB | 功能描述:低压差稳压器 - LDO 500 mA CMOS LDO Vout 0.8V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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