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| 型号： | MCP4662T-502E/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 32/92页 |
| 文件大小： | 0K |
| 描述： | IC DGTL POT 5K 256TAPS 10-DFN |
| 标准包装： | 1 |
| 接片： | 257 |
| 电阻（欧姆）： | 5k |
| 电路数： | 2 |
| 温度系数： | 标准值 150 ppm/°C |
| 存储器类型： | 非易失 |
| 接口： | I²C（设备位址） |
| 电源电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN-EP（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 677 (CN2011-ZH PDF) |
| 其它名称： | MCP4662T-502E/MFDKR |
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MCP454X/456X/464X/466X
DS22107A-page 38
2008 Microchip Technology Inc.
4.2.1
NON-VOLATILE MEMORY
(EEPROM)
This memory can be grouped into two uses of non-vol-
atile memory. These are:
The non-volatile wipers starts functioning below the
devices VPOR/VBOR trip point.
4.2.1.1
General Purpose Registers
These locations allow the user to store up to 10 (9-bit)
locations worth of information.
4.2.1.2
Non-Volatile Wiper Registers
These locations contain the wiper values that are
loaded into the corresponding volatile wiper register
whenever the device has a POR/BOR event. There are
up to two registers, one for each resistor network.
The non-volatile wiper register enables stand-alone
operation of the device (without Microcontroller control)
after being programmed to the desired value.
4.2.1.3
Factory Initialization of Non-Volatile
Memory (EEPROM)
The Non-Volatile Wiper values will be initialized to
mid-scale value. This is shown in Table 4-2.
The General purpose EEPROM memory will be
programmed to a default value of 0xFF.
It is good practice in the manufacturing flow to
configure the device to your desired settings.
TABLE 4-2:
DEFAULT FACTORY
SETTINGS SELECTION
4.2.1.4
Special Features
There are 3 non-volatile bits that are not directly
mapped into the address space. These bits control the
following functions:
EEPROM Write Protect
WiperLock Technology for Non-Volatile Wiper 0
WiperLock Technology for Non-Volatile Wiper 1
The operation of WiperLock Technology is discussed in
Section 5.3. The state of the WL0, WL1, and WP bits
is reflected in the STATUS register (see Register 4-1).
EEPROM Write Protect
All internal EEPROM memory can be Write Protected.
When EEPROM memory is Write Protected, Write
commands to the internal EEPROM are prevented.
Write Protect (WP) can be enabled/disabled by two
methods. These are:
External WP Hardware pin (MCP46X1 devices
only)
Non-Volatile configuration bit
High Voltage commands are required to enable and
disable the nonvolatile WP bit. These commands are
To write to EEPROM, both the external WP pin and the
internal WP EEPROM bit must be disabled. Write
Protect does not block commands to the volatile
registers.
4.2.2
VOLATILE MEMORY (RAM)
There are four Volatile Memory locations. These are:
Volatile Wiper 0
Volatile Wiper 1
(Dual Resistor Network devices only)
Status Register
Terminal Control (TCON) Register
The volatile memory starts functioning at the RAM
retention voltage (VRAM).
Resist
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Code
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AB
Va
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Default
POR
Wi
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Wiper
Code
W
iper
L
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T
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W
rite
Pro
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Settin
g
8-bit 7-bit
-502
5.0 k
Ω
Mid-scale
80h
40h
Disabled
-103
10.0 k
Ω Mid-scale 80h
40h
Disabled
-503
50.0 k
Ω Mid-scale 80h
40h
Disabled
-104
100.0 k
Ω Mid-scale 80h
40h
Disabled
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