参数资料
| 型号： | MCP601-E/P |
| 厂商： | Microchip Technology |
| 文件页数： | 30/34页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP CMOS SGL 2.7V 8-DIP |
| 标准包装： | 60 |
| 放大器类型： | 通用 |
| 电路数： | 1 |
| 输出类型： | 满摆幅 |
| 转换速率： | 2.3 V/µs |
| 增益带宽积： | 2.8MHz |
| 电流 - 输入偏压： | 1pA |
| 电压 - 输入偏移： | 700µV |
| 电流 - 电源： | 230µA |
| 电流 - 输出 / 通道： | 22mA |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 678 (CN2011-ZH PDF) |
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2007 Microchip Technology Inc.
DS21314G-page 5
MCP601/1R/2/3/4
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 100 kΩ to VL, CL = 50 pF and CS is tied low.
FIGURE 2-1:
Open-Loop Gain, Phase vs.
Frequency.
FIGURE 2-2:
Slew Rate vs. Temperature.
FIGURE 2-3:
Gain Bandwidth Product,
Phase Margin vs. Temperature.
FIGURE 2-4:
Quiescent Current vs.
Supply Voltage.
FIGURE 2-5:
Quiescent Current vs.
Temperature.
FIGURE 2-6:
Input Noise Voltage Density
vs. Frequency.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
-40
-20
0
20
40
60
80
100
120
1.E-
01
1.E+
00
1.E+
01
1.E+
02
1.E+
03
1.E+
04
1.E+
05
1.E+
06
1.E+
07
Frequency (Hz)
Open-
Loop
Gain
(
d
B
)
-240
-210
-180
-150
-120
-90
-60
-30
0
Open-
Loop
P
h
ase
(
°)
0.1
1
10 100
1k 10k 100k 1M 10M
Gain
Phase
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50
-25
0
255075
100
125
Ambient Temperature (°C)
S
lew
Ra
te
(V
/s)
Rising Edge
Falling Edge
VDD = 5.0V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-50
-25
0
25
50
75
100 125
Ambient Temperature (°C)
Gain
Bandwidt
h
P
roduct
(M
H
z)
0
10
20
30
40
50
60
70
80
90
100
110
Pha
s
eMa
rgin,
G
=
+1
(°)
GBWP
PM, G = +1
0
50
100
150
200
250
300
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
Quie
sc
ent
Current
pe
rAmplifie
r(A)
IO = 0
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
0
50
100
150
200
250
300
-50
-25
0
255075
100
125
Ambient Temperature (°C)
Quie
sc
ent
Current
pe
rAmplifie
r(A)
VDD = 2.7V
VDD = 5.5V
IO = 0
1.E+01
1.E+02
1.E+03
1.E+04
1.E-
01
1.E+0
0
1.E+0
1
1.E+0
2
1.E+0
3
1.E+0
4
1.E+0
5
1.E+0
6
Frequency (Hz)
Input
Noise
Voltage
Densit
y
(V
/√
Hz)
0.1
1
10
100
1k
10k 100k
1M
10
1
100n
10n
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相关代理商/技术参数 |
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| MCP601-ESL | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP601-ESN | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP601-EST | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP601-I | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.7V to 5.5V Single Supply CMOS Op Amps |
| MCP601-I/CH | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.7V to 5.5V Single-Supply CMOS Op Amps |
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