参数资料
型号: MCP6023-I/SN
厂商: Microchip Technology
文件页数: 4/42页
文件大小: 0K
描述: IC OPAMP 2.5V R-R I/O 8SOIC
标准包装: 100
放大器类型: 通用
电路数: 1
输出类型: 满摆幅
转换速率: 7 V/µs
增益带宽积: 10MHz
电流 - 输入偏压: 1pA
电压 - 输入偏移: 500µV
电流 - 电源: 1mA
电流 - 输出 / 通道: 30mA
电压 - 电源,单路/双路(±): 2.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
产品目录页面: 679 (CN2011-ZH PDF)
其它名称: MCP6023I/SN
MCP6021/1R/2/3/4
DS21685D-page 12
2009 Microchip Technology Inc.
Note: Unless otherwise indicated, TA =+25°C, VDD = +2.5V to +5.5V, VSS =GND, VCM =VDD/2, VOUT ≈ VDD/2,
RL =10kΩ to VDD/2 and CL = 60 pF.
FIGURE 2-31:
Output Voltage Headroom
vs. Output Current.
FIGURE 2-32:
Small-Signal Non-inverting
Pulse Response.
FIGURE 2-33:
Large-Signal Non-inverting
Pulse Response.
FIGURE 2-34:
Output Voltage Headroom
vs. Temperature.
FIGURE 2-35:
Small-Signal Inverting Pulse
Response.
FIGURE 2-36:
Large-Signal Inverting Pulse
Response.
1
10
100
1,000
0.01
0.1
1
10
Output Current Magnitude (mA)
O
u
tput
V
o
lt
age
Headr
oom
;
V
DD
-V
OH
or
V
OL
-V
SS
(mV
)
VDD - VOH
VOL - VSS
-6.E-02
-5.E-02
-4.E-02
-3.E-02
-2.E-02
-1.E-02
0.E+00
1.E-02
2.E-02
3.E-02
4.E-02
5.E-02
6.E-02
0.E+00
2.E-07
4.E-07
6.E-07
8.E-07
1.E-06
2.E-06
Time (200 ns/div)
O
u
tput
V
o
lt
age
(10
m
V
/d
iv
)
G = +1 V/V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.E+00
5.E-07
1.E-06
2.E-06
3.E-06
4.E-06
5.E-06
Time (500 ns/div)
O
u
tput
V
o
lt
age
(V
)
G = +1 V/V
0
1
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
O
u
tput
V
o
lt
age
Headr
oom
V
DD
-V
OH
or
V
OL
-V
SS
(mV
)
VDD - VOH
VOL - VSS
-6.E-02
-5.E-02
-4.E-02
-3.E-02
-2.E-02
-1.E-02
0.E+00
1.E-02
2.E-02
3.E-02
4.E-02
5.E-02
6.E-02
0.E+00
2.E-07
4.E-07
6.E-07
8.E-07
1.E-06
2.E-06
Time (200 ns/div)
O
u
tput
V
o
lt
age
(10
m
V
/d
iv
)
G = -1 V/V
RF = 1 kΩ
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.E+00
5.E-07
1.E-06
2.E-06
3.E-06
4.E-06
5.E-06
Time (500 ns/div)
O
u
tput
V
o
lt
age
(V
)
G = -1 V/V
RF = 1 kΩ
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