参数资料
型号: MCR12M
厂商: ON SEMICONDUCTOR
元件分类: 晶闸管
英文描述: Silicon Controlled Rectifiers
中文描述: 12 A, 600 V, SCR, TO-220AB
封装: CASE 221A-09, 3 PIN
文件页数: 1/8页
文件大小: 92K
代理商: MCR12M
Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 2
1
Publication Order Number:
MCR12/D
Preferred Device
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave silicon gate–controlled devices are needed.
Blocking Voltage to 800 Volts
On–State Current Rating of 12 Amperes RMS at 80
°
C
High Surge Current Capability — 100 Amperes
Rugged, Economical TO220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design
High Immunity to dv/dt — 100 V/
μ
sec Minimum at 125
°
C
Device Marking: Logo, Device Type, e.g., MCR12D, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125
°
C, Sine Wave,
50 to 60 Hz,
Gate Open)
Symbol
Value
Unit
MCR12D
MCR12M
MCR12N
VDRM,
VRRM
400
600
800
Volts
On-State RMS Current
(180
°
Conduction Angles; TC = 80
°
C)
IT(RMS)
12
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125
°
C)
ITSM
100
A
Circuit Fusing Consideration
(t = 8.33 ms)
I2t
41
A2sec
Forward Peak Gate Power
(Pulse Width
1.0
μ
s, TC = 80
°
C)
PGM
5.0
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 80
°
C)
PG(AV)
0.5
Watts
Forward Peak Gate Current
(Pulse Width
1.0
μ
s, TC = 80
°
C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
–40 to
+125
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MCR12D
TO220AB
50 Units/Rail
MCR12M
TO220AB
MCR12N
TO220AB
http://onsemi.com
50 Units/Rail
50 Units/Rail
K
G
A
TO–220AB
CASE 221A
STYLE 3
123
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
相关PDF资料
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MCR225-8FP ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS
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相关代理商/技术参数
参数描述
MCR12MG 功能描述:SCR 600V 12A RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube
MCR12N 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube
MCR12NG 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube
MCR13-28A-01 制造商:SPC Multicomp 功能描述:SWITCH, TOGGLE, SPST, 15A, 125VAC; Contact Configuration:SPST; Switch Operation:On-Off; Contact Voltage AC Nom:125V; Contact Current Max:15A; Switch Terminals:Quick Connect, Solder; Actuator Style:Toggle; Switch Mounting:Panel
MCR13-28A-05 制造商:SPC Multicomp 功能描述:SWITCH, TOGGLE, SPST OFF-ON, SO 制造商:PRIVATE LABEL 功能描述:SWITCH, TOGGLE, SPST, 15A, 125VAC, Contact Configuration:SPST, Switch Operation: 制造商:SPC Multicomp 功能描述:SWITCH, TOGGLE, SPST, 15A, 125VAC, Contact Configuration:SPST, Switch Operation:On-Off, Contact Voltage AC Nom:125V, Contact Current Max:15A, Switch Terminals:Solder, Actuator Style:Toggle, Switch Mounting:Panel