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参数资料
| 型号： | MCR225-8FP |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 晶闸管 |
| 英文描述： | ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS |
| 中文描述： | 25 A, 600 V, SCR |
| 封装： | ISOLATED TO-220, FULL PACK-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 87K |
| 代理商： | MCR225-8FP |
Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 2
1
Publication Order Number:
MCR225FP/D
Preferred Device
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Insulated Package Simplifies Mounting
Indicates UL Registered — File #E69369
Device Marking: Logo, Device Type, e.g., MCR225–8FP, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +125
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR225–8FP
MCR225–10FP
Symbol
Value
Unit
VDRM,
VRRM
600
800
Volts
On-State RMS Current (TC = +70
°
C)
(180
°
Conduction Angles)
IT(RMS)
25
Amps
Peak Non–repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TC = +70
°
C)
ITSM
300
Amps
Circuit Fusing (t = 8.3 ms)
I2t
375
A2s
Forward Peak Gate Power
(TC = +70
°
C, Pulse Width
1.0
μ
s)
PGM
20
Watts
Forward Average Gate Power
(TC = +70
°
C, t = 8.3 ms)
PG(AV)
0.5
Watt
Forward Peak Gate Current
(TC = +70
°
C, Pulse Width
1.0
μ
s)
IGM
2.0
Amps
RMS Isolation Voltage (TA = 25
°
C,
Relative Humidity
20%)
(
)
V(ISO)
1500
Volts
Operating Junction Temperature Range
TJ
–40 to
+125
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ISOLATED SCRs
25 AMPERES RMS
600 thru 800 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MCR225–8FP
ISOLATED TO220FP
500/Box
http://onsemi.com
MCR225–10FP
ISOLATED TO220FP
500/Box
ISOLATED TO–220 Full Pack
CASE 221C
STYLE 2
1
2
3
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
K
G
A
(
)
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相关代理商/技术参数 |
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|---|---|
| MCR225-8FP_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR225-9 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:THYRISTORS SILICON CONTROLLED RECTIFIERS |
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| MCR22-6 | 制造商:Motorola Inc 功能描述: |
| MCR22-6_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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