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参数资料
| 型号： | MCR225-8FP |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 晶闸管 |
| 英文描述： | ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS |
| 中文描述： | 25 A, 600 V, SCR |
| 封装： | ISOLATED TO-220, FULL PACK-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 87K |
| 代理商： | MCR225-8FP |
MCR225–8FP, MCR225–10FP
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
CS
R
θ
JA
TL
1.5
°
C/W
Thermal Resistance, Case to Sink
2.2 (typ)
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
°
C
TJ = 125
°
C
IDRM,
IRRM
—
—
—
—
10
2
μ
A
mA
ON CHARACTERISTICS
Peak Forward On–State Voltage(1)
(ITM = 50 A)
VTM
—
—
1.8
Volts
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
IGT
—
—
40
mA
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
VGT
—
0.8
1.5
Volts
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125
°
C)
VGD
0.2
—
—
Volts
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
—
20
40
mA
Turn-On Time
(ITM = 25 A, IGT = 40 mAdc)
tgt
—
1.5
—
μ
s
Turn-Off Time (VDRM = Rated Voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125
°
C)
DYNAMIC CHARACTERISTICS
tq
—
—
15
35
—
—
μ
s
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
(1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle
≤
2%.
dv/dt
—
100
—
V/
μ
s
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相关代理商/技术参数 |
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| MCR225-8FP_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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