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| 型号： | MCZ33897DEFR2 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 19/19页 |
| 文件大小： | 0K |
| 描述： | IC TXRX SGL WIRE CAN 8-SOIC |
| 标准包装： | 2,500 |
| 类型： | 收发器 |
| 驱动器/接收器数： | 1/1 |
| 规程： | CAN |
| 电源电压： | 12V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
33897
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions of -40
°C ≤ T
A ≤ 125 °C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS
Normal Speed Rising Output Delay
200
Ω ≤ R
L ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs
Measured from TXD = VIL to VBUS as follows:
Max Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V
Min Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V
Max Time to VBUSMOD = 2.7 V, VBATT = 5.0 V
Min Time to VBUSMOD = 1.0 V, VBATT = 5.0 V
tDLYNORMRO
2.0
–
6.3
μs
Normal Speed Falling Output Delay
200
Ω ≤ R
L ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs
Measured from TXD = VIH to VBUS as follows:
Max Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V
Min Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V
Max Time to VBUSMOD = 1.0 V, VBATT = 5.0 V
Min Time to VBUSMOD = 2.7 V, VBATT = 5.0 V
tDLYNORMFO
1.8
–
8.5
μs
High Speed Rising Output Delay
75
Ω ≤ R
L ≤ 135 Ω, 0.0 μs ≤ Load Time Constants ≤ 1.5 μs,
8.0 V
≤ V
BATT ≤ 16 V
Measured from TXD = VIL to VBUS as follows:
Max Time to VBUS = 3.7 V
Min Time to VBUS = 1.0 V
tDLYHSRO
0.1
–
1.7
μs
High Speed Falling Output Delay
75
Ω ≤ R
L ≤ 135 Ω, 0.0 μs ≤ Load Time Constants ≤ 1.5 μs,
8.0 V
≤ V
BATT ≤ 16 V
Measured from TXD = VIH to VBUS as follows:
Max Time to VBUS = 1.0 V
Min Time to VBUS = 3.7 V
tDLYHSFO
0.04
–
3.0
μs
Notes
10.
11.
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