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型号： MCZ33903BS5EK
厂商： Freescale Semiconductor
文件页数： 26/106页
文件大小： 0K
描述： IC SBC CAN HS 5.0V 32SOIC
标准包装： 42
应用： 系统基础芯片
接口： CAN，LIN
电源电压： 5.5 V ~ 28 V
封装/外壳： 32-SSOP（0.295"，7.50mm 宽）裸露焊盘
供应商设备封装： 32-SOICW 裸露焊盘
包装： 管件
安装类型： 表面贴装
Analog Integrated Circuit Device Data
26
Freescale Semiconductor
33903/4/5
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
SPLIT
Output voltage
Loaded condition ISPLIT = ±500 A
Unloaded condition Rmeasure > 1.0 M
VSPLIT
0.3 x VDD
0.45 x
VDD
0.5 x VDD
0.7 x VDD
0.55 x VDD
V
Leakage current
-12 V < VSPLIT < +12 V
-22 to -12 V < VSPLIT < +12 to +35 V
ILSPLIT
-
0.0
-
5.0
200
A
LIN TERMINALS (LIN-T/1, LIN-T2)
LIN-T1, LIN-T2, HS switch drop @ I = -20 mA, VSUP > 10.5 V
VLT_HSDRP
-
1.0
1.4
V
LIN1 & LIN2 33903D/5D PIN - LIN 33903S/5S PIN (Parameters guaranteed for VSUP/1, VSUP2 7.0 V VSUP 18 V)
Operating Voltage Range
VBAT
8.0
-
18
V
Supply Voltage Range
VSUP
7.0
-
18
V
Current Limitation for Driver Dominant State
Driver ON, VBUS = 18 V
IBUS_LIM
40
90
200
mA
Input Leakage Current at the receiver
Driver off; VBUS = 0 V; VBAT = 12 V
IBUS_PAS_DOM
-1.0
-
mA
Leakage Output Current to GND
Driver Off; 8.0 V
VBAT 18 V; 8.0 V VBUS 18 V; VBUS VBAT
IBUS_PAS_REC
-
20
A
Control unit disconnected from ground (Loss of local ground must not affect
communication in the residual network)
GNDDEVICE = VSUP; VBAT = 12 V; 0 < VBUS < 18 V (Guaranteed by design)
IBUS_NO_GND
-1.0
-
1.0
mA
VBAT Disconnected; VSUP_DEVICE = GND; 0 < VBUS < 18 V (Node has to
sustain the current that can flow under this condition. Bus must remain
operational under this condition). (Guaranteed by design)
IBUSNO_BAT
-
100
A
Receiver Dominant State
VBUSDOM
-
0.4
VSUP
Receiver Recessive State
VBUSREC
0.6
-
VSUP
Receiver Threshold Center
(VTH_DOM + VTH_REC)/2
VBUS_CNT
0.475
0.5
0.525
VSUP
Receiver Threshold Hysteresis
(VTH_REC - VTH_DOM)
VHYS
-
0.175
VSUP
LIN Wake-up threshold from LP VDD ON or LP VDD OFF mode
VBUSWU
-
5.3
5.8
V
LIN Pull-up Resistor to VSUP
RSLAVE
20
30
60
k
Overtemperature Shutdown (Guaranteed by design)
TLINSD
140
160
180
°C
Overtemperature Shutdown Hysteresis (Guaranteed by design)
TLINSD_HYS
-
10
-
°C
Table 6. Static Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V
VSUP 28 V, -40 C TA 125 C, unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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