参数资料
型号: MCZ79076EGR2
厂商: Freescale Semiconductor
文件页数: 10/13页
文件大小: 0K
描述: IC IGNITION CTRL ELECTR 16-SOIC
标准包装: 1,000
系列: *
类型: *
应用: *
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC W
包装: 带卷 (TR)
Analog Integrated Circuit Device Data
6
Freescale Semiconductor
79076
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
EST Threshold Voltage (10)
(Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V)
Increasing
Decreasing
Hysteresis
VTH+(EST)
VTH-(EST)
VHYS(EST)
1.65
0.8
0.79
1.86
0.89
0.97
2.0
-
V
Ref/Dwell Current (11)
(VCC = 16 V, Advance = 1.0 V, EST = Bypass = 0 V)
Ref/Dwell Voltage = 1.0 V
Ref/Dwell Voltage = 20 V
I(R/D)
-12
-1.0
-1.38
0.02
1.0
5.0
A
Ref/Dwell Clamp Voltage
(VCC = 16 V, Advance = 1.0 V, EST = Bypass = 0 V)
IR/D = 100A (Sourcing)
IR/D = 1.0mA (Sourcing)
V(R/D)CL
-0.01
-0.62
-0.04
-0.54
0.2
-
V
Ref/Dwell Threshold (Bypass Mode) (12)
(Advance = 1.0 V, EST = Bypass = 0 V, Reference = sinking 10 A)
Increasing
Decreasing
Hysteresis
VTH+(R/D)BP
VTH-(R/D)BP
VHYS(R/D)BP
VB + 0.09
VB + 0.018
0.055
VB + 0.106
VB + 0.03
0.076
VB + 0.116
-
V
Ref/Dwell Threshold (EST Mode) (12)
(Advance = 1.0 V, EST = 0 V, Bypass = 3.0 V, Reference = sinking
10 A)
Increasing
Decreasing
Hysteresis
VTH+(R/D)EST
VTH-(R/D)EST
VHYS(R/D)EST
VB + 0.445
VB + 0.038
0.395
VB + 0.50
VB + 0.062
0.436
VB + 0.535
-
V
Ref/Dwell Threshold (No Pump) (13)
(Advance = 1.0 V, EST = Bypass = 0 V, Dwell = sinking 10 mA)
Increasing
Decreasing
Hysteresis
VTH+(R/D)NP
VTH-(R/D)NP
VHYS(R/D)NP
VB + 0.003
VB + 0.021
VB + 0.013
VB + 0.118
VB + 0.047
VB + 0.072
VB + 0.128
-
V
Notes
10.
EST Threshold Voltage is the positive (or negative) going voltage on EST necessary cause the Dwell voltage to positive (or negative)
going transition 1.5 V respectively. It is expressed as VTH±(EST) and is in reference to ground.
11.
Ref/Dwell can either source or sink current; A minus sign denotes the Ref/Dwell is sourcing current.
12.
Ref/Dwell Threshold Voltage (Bypass Mode) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Reference
voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage
and VX is the additional voltage necessary to attain the threshold.
13.
Ref/Dwell Threshold Voltage (No Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to
positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is
the additional voltage necessary to attain the threshold. Advance = 1.0 V providing no input assist or "No Pump" influence of Dwell signal;
Reference open.
Table 2. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V
≤ V
CC ≤ 18 V, - 40°C ≤ T
A ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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