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| 型号： | MCZ79076EGR2 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/13页 |
| 文件大小： | 0K |
| 描述： | IC IGNITION CTRL ELECTR 16-SOIC |
| 标准包装： | 1,000 |
| 系列： | * |
| 类型： | * |
| 应用： | * |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC W |
| 包装： | 带卷 (TR) |
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
79076
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 2. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V
≤ V
CC ≤ 18 V, - 40°C ≤ T
A ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
INPUTS
Advance Input Resistance
(VCC = 16 V, Ref/Dwell = 1.0 V, Advance = 1.0 mA, EST =
Bypass = 0 V)
R(A)
15
18
25
k
Advance Voltage (7)
VCC = 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V
VTH(A)
-
0.05
0.1
V
Advance Threshold Voltage (7)
(VCC = 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V,)
Dwell = Reference = RPM Detect = open,
Dwell Control = sinking 10 A)
Increasing
Decreasing
Hysteresis
VTH+(A)
VTH-(A)
VHYS(A)
VB + 0.103
VB + 0.045
0.018
VB + 0.114
VB + 0.068
0.045
VB + 0.130
-
V
Bypass Input Resistance
(VCC = 16 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V)
R(BP)
6.0
9.2
16
k
Bypass Voltage
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0V)
V(BP)
-
0.065
0.1
V
Bypass Threshold Voltage (8)
(Ref/Dwell = Advance = 1.0 V, EST = 3.0 V)
Increasing
Decreasing
Hysteresis
VTH+(BP)
VTH-(BP)
VHYS(BP)
VB + 1.6
VB + 0.9
0.65
VB + 0.188
VB + 0.103
0.86
VB + 2.1
-
V
Current Sense Threshold Voltage (9)
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 3.0 V)
VTH(CS)
90
105
121
mV
EST Input Resistance
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V)
R(EST)
7.0
10.3
18
k
EST Input Voltage (EST Mode)
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V)
V(EST)
-
0.07
0.1
V
Notes
7.
Advance Threshold Voltage is the positive (or negative) going voltage on Advance necessary cause the Dwell Control voltage to positive
(or negative) going transition 2.0 V respectively. It is expressed as VTH±(A) = VB + VX where VB is the Bias Voltage and VX is the additional
voltage necessary to attain the threshold.
8.
Bypass Threshold Voltage is the positive (or negative) going voltage on Bypass necessary cause the Dwell voltage to positive (or
negative) going transition 1.5 V respectively. It is expressed as VTH±(BP) = VB + VX where VB is the Bias Voltage and VX is the additional
voltage necessary to attain the threshold.
9.
Increasing voltage on Current Sense which when attained will cause Dwell to transition low to 1.5 V with a 10 mA load.
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