参数资料
| 型号： | MDC3105DMT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 9/14页 |
| 文件大小： | 0K |
| 描述： | IC INDUCTVE LOAD DRIVR 8V SC74-6 |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 1 |
| 类型： | 继电/负载驱动器 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 电流 - 输出 / 通道： | 400mA |
| 电流 - 峰值输出： | 500mA |
| 电源电压： | 6V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | SC-74 |
| 包装： | 剪切带 (CT) |
| 其它名称： | MDC3105DMT1OSCT |
MDC3105
Designing with this Data Sheet
there will be adequate input current available to
1.
Determine the maximum inductive load current (at
turn on the MDC3105 at all temperatures.
2.
3.
4.
5.
max V CC , min coil resistance and usually minimum
temperature) that the MDC3105 will have to drive
and make sure it is less than the max rated current.
For pulsed operation, use the Transient Thermal
Response of Figure 12 and the instructions with it
to determine the maximum limit on transistor power
dissipation for the desired duty cycle and
temperature range.
Use Figures 10 and 11 with the SOA notes above to
insure that instantaneous operation does not push
the device beyond the limits of the SOA plot.
While keeping any V O(sat) requirements in mind,
determine the max input current needed to achieve
that output current from Figures 2 and 6.
For levels of input current below 100 m A, use the
input threshold curves of Figure 4 to verify that
6.
7.
8.
9.
For levels of input current above 100 m A, enter
Figure 3 using that max input current and determine
the input voltage required to drive the MDC3105
from the solid V in versus I in line. Select a suitable
drive source family from those whose dotted lines
cross the solid input characteristic line to the right
of the I in , V in point.
Using the max output current calculated in step 1,
check Figure 7 to insure that the range of Zener
clamp voltage over temperature will satisfy all
system and EMI requirements.
Using Figures 8 and 9, insure that “OFF” state
leakage over temperature and voltage extremes does
not violate any system requirements.
Review circuit operation and insure none of the
device max ratings are being exceeded.
APPLICATIONS DIAGRAMS
+3.0 ≤ V DD ≤ +3.75 Vdc
+4.5 ≤ V CC ≤ +5.5 Vdc
+
+
AROMAT
TX2-L2-5 V
V out (6)
MDC3105DMT1
V out (3)
74HC04 OR
V in (5)
V in (2)
74HC04 OR
EQUIVALENT
GND (1)
GND (4)
EQUIVALENT
Figure 13. A 200 mW, 5.0 V Dual Coil Latching Relay Application
with 3.0 V ? HCMOS Level Translating Interface
http://onsemi.com
9
相关PDF资料 |
PDF描述 |
|---|---|
| MDP-02 | PLUG DBL BANANA W/WIRE GUIDE SET |
| MDP-S-9 | PLUG DBL BANANA W/SHORT BAR WHT |
| MDP-ST | PLUG DBL BANANA W/SOLDER TURRET |
| MDP-X | PLUG DBL BANANA ISOLAT W/4 TERM |
| MH10-14FLX-BOTTLE | CONN FORK LOCK HEATSHRINK 25PC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MDC3105DMT1G | 功能描述:功率驱动器IC Dual Integrated Relay Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MDC3105LT1 | 功能描述:功率驱动器IC 6.6V Inductive Load RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MDC3105LT1G | 功能描述:功率驱动器IC 6.6V Inductive Load Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MDC3105LT1G-CUT TAPE | 制造商:ON 功能描述:MDC3105 Series 6 V 400 mA Integrated Relay Inductive Load Driver SOT-23-3 |
| MDC-316 | 制造商:POWER DYNAMICS 功能描述:6PIN MINI DIN FULLY SHLDD |
发布紧急采购，3分钟左右您将得到回复。