参数资料
型号: MDC3105LT1G
厂商: ON Semiconductor
文件页数: 2/14页
文件大小: 0K
描述: IC RELAY/DRVR INDUCT LOAD SOT23
标准包装: 1
类型: 继电/负载驱动器
输入类型: 非反相
输出数: 1
电流 - 输出 / 通道: 400mA
电流 - 峰值输出: 500mA
电源电压: 6V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 标准包装
产品目录页面: 1118 (CN2011-ZH PDF)
其它名称: MDC3105LT1GOSDKR
MDC3105
INTERNAL CIRCUIT DIAGRAMS
V out
(3)
V out
(1, 2, 5, 6)
V in
(1)
1.0 k
33 k
6.6 V
V in
(3)
1.0 k
33 k
6.6 V
GND
CASE 318
(2)
GND
CASE 463A
(4)
V out
(6)
V out
(3)
V in
1.0 k
1.0 k
V in
6.6 V 6.6 V
(5)
33 k
33 k
(2)
GND
(1)
GND
(4)
CASE 318F
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Power Supply Voltage
Input Voltage
Reverse Input Voltage
Rating
Symbol
V CC
V in(fwd)
V in(rev)
Value
6.0
6.0
? 0.5
Unit
Vdc
Vdc
Vdc
Repetitive Pulse Zener Energy Limit (Duty Cycle ≤ 0.01%)
Output Sink Current ? Continuous
Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
SOT ? 23
Ezpk
I O
T J
T A
T stg
50
500
150
? 40 to +85
? 65 to +150
mJ
mA
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Power Dissipation (Note 1)
Derate above 25 ° C
Total Device Power Dissipation (Note 1)
Derate above 25 ° C
Total Device Power Dissipation (Note 1)
Derate above 25 ° C
Thermal Resistance Junction ? to ? Ambient
SOT ? 23
SC ? 74
SOT ? 563
SOT ? 23
SC ? 74
SOT ? 563
P D
P D
P D
R q JA
225
1.8
380
1.5
357
2.9
556
329
250
mW
mW/ ° C
mW
mW/ ° C
mW
mW/ ° C
° C/W
1. FR ? 5 PCB of 1 ″ x 0.75 ″ x 0.062 ″ , T A = 25 ° C
http://onsemi.com
2
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