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参数资料
| 型号： | MDLM111-X |
| 厂商： | National Semiconductor Corporation |
| 英文描述： | VOLTAGE COMPARATOR |
| 中文描述： | 电压比较器 |
| 文件页数： | 3/17页 |
| 文件大小： | 310K |
| 代理商： | MDLM111-X |
MICROCIRCUIT DATA SHEET
MDLM111-X REV 0B0
(Absolute Maximum Ratings)
(Note 1)
Positive Supply Voltage
+30.0V
Negative Supply Voltage
-30.0V
Total Supply Voltage
36V
Output to Negative Supply Voltage
50V
GND to Negative Supply Voltage
30V
Differential Input Voltage
+30V
Sink Current
50mA
Input Voltage
(Note 2)
+15V
Power Dissipation
(Note 3)
500mW
Output Short Circuit Duration
10 sec.
Maximum Strobe Current
10mA
Operating Temperature Range
-55 C < Ta < 125 C
Thermal Resistance
ThetaJA
8 Ld DIP (Still Air @ 0.5W)
(500LF/Min Air flow @ 0.5W)
8 Ld Metal Can Pkg (Still Air @ 0.5W)
(500LF/Min Air flow @ 0.5W)
10 CERAMIC SOIC (Still Air @ 0.5W)
(500LF/Min Air flow @ 0.5W)
20 Ld LCC (Still Air @ 0.5W)
(500LF/Min Air flow @ 0.5W)
134 C/W
76 C/W
162 C/W
92 C/W
231 C/W
153 C/W
90 C/W
65 C/W
ThetaJC
8 Ld DIP
8 Ld Metal Can Pkg
10 CERAMIC SOIC
20 Ld LCC
Storage Temperature Range
21 C/W
50 C/W
24 C/W
21 C/W
-65 C < Ta < 150 C
Maximum Junction Temperature
175 C
Lead Temperature
(Soldering, 60 seconds)
Voltage at Strobe Pin
300 C
V+ -5V
Package Weight
(Typical)
8 Ld Metal Can
8 Ld Dip
10 Ld CERAMIC SOIC
20 Ld LCC
ESD Rating
(Note 4)
965mg
1100mg
220mg
TBD
3
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