- 您现在的位置：买卖IC网 > PDF目录95927 > ME4565 (LITE-ON SEMICONDUCTOR CORP) POWER, FET PDF资料下载
参数资料
| 型号： | ME4565 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | POWER, FET |
| 封装： | SOP-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 1878K |
| 代理商： | ME4565 |
N- and P-Channel 40-V Power MOSFET
ME4565
02
Nov, 2007-Ver4.0
Rev 0. Nov. 2007
Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
STATIC
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
N-Ch
P-Ch
40
-40
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
VDS=VGS, ID=-250μA
N-Ch
P-Ch
0.6
-0.8
0.9
-1.0
1.6
-1.8
V
IGSS
Gate Leakage Current
VDS=0V, VGS=±16V
N-Ch
P-Ch
±100
nA
VDS=40V, VGS=0V
VDS=-40V, VGS=0V
N-Ch
P-Ch
1
-1
IDSS
Zero Gate Voltage Drain Current
VDS=40V, VGS=0V,TJ=55℃
VDS=-40V, VGS=0V,TJ=55℃
N-Ch
P-Ch
10
-10
μ
A
ID(ON)
On-State Drain Current
a
VDS≧5V, VGS= 10V
VDS≦-5V, VGS= -10V
N-Ch
P-Ch
20
-20
A
VGS=10V, ID= 5.2A
VGS=-10V, ID= -4.5A
N-Ch
P-Ch
32
43
40
54
RDS(ON)
Drain-Source On-State Resistance
a
VGS=4.5V, ID= 4.9A
VGS=-4.5V, ID= -3.9A
N-Ch
P-Ch
35
48
45
60
mΩ
GFS
Forward Transconductance
VDS=15V, ID=5.2A
VDS=-15V, ID=-4.5A
N-Ch
P-Ch
18
13
S
VSD
Diode Forward Voltage
IS=1.7A, VGS=0V
IS=-1.7A, VGS=0V
N-Ch
P-Ch
0.78
-0.79
1.2
-1.2
V
DYNAMIC
Qg
Total Gate Charge
N-Ch
P-Ch
8
12
Qgs
Gate-Source Charge
N-Ch
P-Ch
3.3
5
Qgd
Gate-Drain Charge
N-Channel
VDS=20V, VGS=4.5V, ID=5.2A
P-Channel
VDS=-20V, VGS=-4.5V, ID=-4.5A
N-Ch
P-Ch
2.8
5.2
nC
Rg
Gate Resistance
VGS=0V, VDS=0V, f=1MHZ
N-Ch
P-Ch
0.7
4.5
Ω
Ciss
Input capacitance
N-Ch
P-Ch
500
1000
Coss
Output Capacitance
N-Ch
P-Ch
43
81
Crss
Reverse Transfer Capacitance
N-Channel
VDS=20V, VGS=0V, F=1MHz
P-Channel
VDS=-20V, VGS=0V, F=1MHz
N-Ch
P-Ch
9.3
22
pF
td(on)
Turn-On Delay Time
N-Ch
P-Ch
8
30
tr
Turn-On Rise Time
N-Ch
P-Ch
15
12
td(off)
Turn-Off Delay Time
N-Ch
P-Ch
36
62
tf
Turn-On Fall Time
N-Channel
VDD=15V, RL =15Ω
ID=1A, VGEN=10V, RG=6Ω
P-Channel
VDD=-15V, RL =15Ω
ID=-1A, VGEN=-10V,RG=6Ω
N-Ch
P-Ch
2
5
ns
Electrical Characteristics
(TA =25℃ Unless Otherwise Specified)
相关PDF资料 |
PDF描述 |
|---|---|
| ME4565 | 4.9 A, 40 V, 0.04 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| MF-10KDS-R13-0-70 | RF SMALL SIGNAL TRANSISTOR |
| MF-10KDS-R13-0-61 | RF SMALL SIGNAL TRANSISTOR |
| MF-10KDS-R13-0-60 | RF SMALL SIGNAL TRANSISTOR |
| MF34-1600R | 40 A, 1600 V, SILICON, RECTIFIER DIODE, DO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M-E-462-BLK-&-WHITE | 功能描述:电气外壳 CAB ALUM BL&WH RoHS:否 制造商:Bud Industries 产品:Wall Mount Enclosures 类型:Single Door NEMA 额定值:3R 外部深度:254 mm 外部高度:305 mm 外部宽度:305 mm 面板宽度:261 mm 面板高度:261 mm 材料:Steel 颜色:Gray 通风:Not Available |
| ME-470-25 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| ME475AE-W1 | 制造商:Black Box Corporation 功能描述:1 YEAR WARRANTY FOR ME475AE |
| ME475AE-W3 | 制造商:Black Box Corporation 功能描述:3 YEAR WARRANTY FOR ME475AE |
| ME475A-W1 | 制造商:Black Box Corporation 功能描述:1 YEAR WARRANTY FOR ME475A |
发布紧急采购，3分钟左右您将得到回复。