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参数资料
| 型号： | MEK150-04DA |
| 厂商： | IXYS CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Fast Recovery Epitaxial Diode (FRED) Module |
| 中文描述： | 150 A, 400 V, SILICON, RECTIFIER DIODE, TO-240AA |
| 封装： | MODULE-3 |
| 文件页数： | 1/1页 |
| 文件大小： | 29K |
| 代理商： | MEK150-04DA |
2000 IXYS All rights reserved
1 - 1
Dimensions in mm (1 mm = 0.0394")
Features
G
International standard package
with DCB ceramic base plate
G
Planar passivated chips
G
Short recovery time
G
Low switching losses
G
Soft recovery behaviour
G
Isolation voltage 3600 V~
G
UL registered E 72873
Applications
G
Antiparallel diode for high frequency
switching devices
G
Free wheeling diode in converters
and motor control circuits
G
Inductive heating and melting
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
High reliability circuit operation
G
Low voltage peaks for reduced
protection circuits
G
Low noise switching
G
Low losses
Preliminary data
Fast Recovery
Epitaxial Diode
(FRED) Module
MEK 150-04 DA
V
RRM
= 400 V
I
FAV
= 150 A
t
rr
= 300 ns
TO-240 AA
1
2
3
1
2
3
V
RSM
V
V
RRM
V
Type
400
400
MEK 150-04DA
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
200
150
A
A
T
C
= 100 C; rectangular, d = 0.5
I
FSM
T
VJ
= 45 C; t = 10 ms (50 Hz), sine
1200
A
T
VJ
T
VJM
T
stg
-40...+150
C
C
C
175
-40...+150
P
tot
T
C
= 25 C
360
W
V
ISOL
50/60 Hz, RMS; I
ISOL
1 mA
3600
V~
M
d
Mounting torque with screw M5
Terminal connection torque
2.5-4/22-35
2.5-4/22-35
Nm/lb.in.
Nm/lb.in.
Weight
typical
90
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25 C V
R
= V
RRM
T
VJ
= 150 C V
R
= V
RRM
2.0
8.5
mA
mA
V
F
I
F
= 300 A;
T
VJ
=150 C
T
VJ
= 25 C
1.4
1.6
V
V
R
thJC
R
thCH
0.35
K/W
K/W
0.08
I
RM
V
R
= 100 V; I
F
= 200 A; -di
F
/dt = 100 A/μs
T
VJ
= 100 C
11
14
A
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
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