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参数资料
| 型号： | MEO550-02DA |
| 厂商： | IXYS CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Fast Recovery Epitaxial Diode (FRED) Module |
| 中文描述： | 582 A, 200 V, SILICON, RECTIFIER DIODE |
| 封装： | MODULE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 52K |
| 代理商： | MEO550-02DA |
2000 IXYS All rights reserved
1 - 2
150
200
9
-di/dt = A/ s
15
0.52
1.06
75
75
822
582
2880
3000
3600
-40...+150
-40...+125
110
115200
117100
93300
94800
4800
5280
4320
4750
150
12.7
9.6
50
2.25-2.75/20-25
4.50-5.50/40-48
0.84
1.10
1.08
1.25
0.114
0.071
5
4
160
Dimensions in mm (1 mm = 0.0394")
Features
G
International standard package
with DCB ceramic base plate
G
Planar passivated chips
G
Short recovery time
G
Low switching losses
G
Soft recovery behaviour
G
Isolation voltage 3600 V~
G
UL registered E 72873
Applications
G
Antiparallel diode for high frequency
switching devices
G
Free wheeling diode in converters
and motor control circuits
G
Inductive heating and melting
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
High reliability circuit operation
G
Low voltage peaks for reduced
protection circuits
G
Low noise switching
G
Low losses
x
I
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1750
3 1
V
RSM
V
RRM
Type
V
V
200
200
MEO 550-02DA
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
FAVM
x
I
FRM
I
FSM
T
C
=
T
C
=
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
C
C; rectangular, d = 0.5
A
A
A
A
A
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A
A
I
2
t
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A
2
s
A
2
s
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A
2
s
A
2
s
T
VJ
T
stg
T
Smax
P
tot
V
ISOL
C
C
C
T
C
= 25 C
50/60 Hz, RMS t = 1 min
I
ISOL
1 mA
Mounting torque (M6)
Terminal connection torque (M6)
W
V~
V~
t = 1 s
M
d
Nm/lb.in.
Nm/lb.in.
d
S
d
A
a
Creep distance on surface
Strike distance through air
Maximum allowable acceleration
mm
mm
m/s
2
Weight
g
Symbol
Test Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25 C
T
VJ
= 25 C
T
VJ
= 125 C
I
F
= 300
V
R
= V
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
T
VJ
=125 C
T
VJ
= 25 C
T
VJ
=125 C
T
VJ
= 25 C
mA
mA
mA
V
F
V
V
V
V
I
F
= 520
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
For power-loss calculations only
V
m
DC current
DC current
K/W
K/W
I
F
=500
V
=100
T
VJ
= 100 C
T
VJ
= 25 C
T
VJ
= 100 C
ns
A
A
Fast Recovery
Epitaxial Diode
(FRED) Module
MEO 550-02 DA
V
RRM
= 200 V
I
FAVM
= 582 A
t
rr
= 150 ns
3
1
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