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参数资料
| 型号： | MEO550-02DA |
| 厂商： | IXYS CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Fast Recovery Epitaxial Diode (FRED) Module |
| 中文描述： | 582 A, 200 V, SILICON, RECTIFIER DIODE |
| 封装： | MODULE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 52K |
| 代理商： | MEO550-02DA |
2000 IXYS All rights reserved
2 - 2
200
600
-di
F
/dt
1000
0
400
800
A/
s
100
120
140
160
180
200
220
ns
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°
C
t
s
K/W
0
200
400
600
di
F
/dt
800
A/
m
s
1000
0
20
40
60
0
1
2
3
4
5
6
μ
s
V
FR
V
200
600
1000
0
400
800
A/
m
s
0
10
20
30
40
50
60
A
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
m
C
0.0
0.5
1.0
1.5
0
100
200
300
400
500
600
700
800
A
I
RM
Q
r
I
F
V
F
-di
F
/dt
-di
F
/dt
V
t
rr
t
fr
A/
m
s
MEO 550-02
Z
Z
thJH
Fig. 7 Transient thermal impedance junction to heatsink
T
VJ
= 100
°
C
V
R
= 100V
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Typ. reverse recovery
charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
versus
max. voltage drop V
F
per leg
T
VJ
= 100
°
C
V
R
= 100V
T
VJ
= 100
°
C
V
R
= 100V
Q
r
I
RM
Fig. 4 Dynamic parameters Q
, I
versus junction temperature T
VJ
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage V
FR
and t
fr
versus di
F
/dt
T
VJ
=125
°
C
T
VJ
= 25
°
C
I
F
=1100A
I
F
= 550A
I
F
= 275A
I
F
=1100A
I
F
= 550A
I
F
= 275A
I
F
=1100A
I
F
= 550A
I
F
= 275A
Constants for Z
thJS
calculation:
i
R
thi
(K/W)
0.001
0.004
0.027
0.082
t
i
(s)
0.08
0.024
0.112
0.464
1
2
3
4
MEO 550-02 DA
T
VJ
= 100
°
C
I
F
= 550A
V
FR
t
fr
thJS
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