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参数资料
| 型号： | MG150J1ZS50 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封装： | 2-95A3A, 5 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 代理商： | MG150J1ZS50 |
MG150J1ZS50
2001-08-16
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J1ZS50
High Power Switching Applications
Motor Control Applications
The electrodes are isolated from case.
High input impedance
Includes a complete half bridge in one package.
Enhancement-mode
High speed : tf = 0.30s (max) (IC = 150A)
trr = 0.15s (max) (IF = 150A)
Low saturation voltage
: VCE (sat) = 2.70V (max) (IC = 150A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
Reverse voltage
VR
600
V
DC
IC
150
Collector current
1ms
ICP
300
A
DC
IF
150
Forward current
1ms
IFM
300
A
Collector power dissipation (Tc = 25°C)
PC
780
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 min.)
V
Screw torque (Terminal / mounting)
―
3 / 3
Nm
JEDEC
―
JEITA
―
TOSHIBA
2-95A3A
Unit: mm
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相关代理商/技术参数 |
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| MG150J2YS1 | 制造商:n/a 功能描述:IGBT Module |
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| MG150J2YS40 | 制造商:n/a 功能描述:_ |
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| MG150J7KS50 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA GTR Module Silicon N Channel IGBT |
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