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参数资料
| 型号： | MG150J2YS50 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封装： | 2-95A1A, 7 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 456K |
| 代理商： | MG150J2YS50 |
MG150J2YS50
2001-02-22 1/5
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J2YS50
High Power Switching Applications
Motor Control Applications
The electrodes are isolated from case
High input impedance
Includes a complete half bridge in one package
Enhancement-mode
High speed
: tf = 0.30s (Max) (IC = 150A)
trr = 0.15s (Max) (IF = 150A)
Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 150A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
150
Collector current
1ms
ICP
300
A
DC
IF
150
Forward current
1ms
IFM
300
A
Collector power dissipation (Tc = 25°C)
PC
780
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 min.)
V
Screw torque (Terminal / mounting)
―
3 / 3
Nm
JEDEC
―
EIAJ
―
TOSHIBA
2-95A1A
Unit: mm
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
000707EAA2
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| MG150Q2YS50 | 200 A, 1200 V, N-CHANNEL IGBT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MG150J7KS50 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA GTR Module Silicon N Channel IGBT |
| MG150J7KS60 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA GTR MODULE SILICON N CHANNEL IGBT |
| MG150J7KS61 | 功能描述:IGBT MOD CMPCT 600V 150A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| MG150M2YK1 | 制造商:n/a 功能描述:IGBT Module |
| MG150M2YL1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MODULES |
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