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参数资料
| 型号： | MG150J2YS50 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封装： | 2-95A1A, 7 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 456K |
| 代理商： | MG150J2YS50 |
MG150J2YS50
2001-02-22 2/5
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0
―
±500
nA
Collector cut-off current
ICES
VCE = 600V, VGE = 0
―
2.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 15mA, VCE = 5V
5.0
7.0
8.0
V
Collector-emitter saturation voltage
VCE (sat)
IC = 150A, VGE = 15V
―
2.10
2.70
V
Input capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
―
14200
―
pF
Turn-on delay time
td(on)
―
0.15
0.30
Rise time
tr
―
0.15
0.30
Turn-on time
ton
―
0.50
1.00
Turn-off delay time
td(off)
―
0.20
0.40
Fall time
tf
―
0.15
0.30
Switching time
Turn-off time
toff
Inductive load
VCC = 300V
IC = 150A
VGE = ±15V
RG = 6.2
(Note 1)
―
0.50
1.00
s
Forward voltage
VF
IF = 150A, VGE = 0
―
2.30
3.00
V
Reverse recovery time
trr
IF = 150A, VGE = 10V
di / dt = 200A / s
―
0.08
0.15
s
Transistor stage
―
0.16
Thermal resistance
Rth (j-c)
Diode stage
―
0.35
°C / W
Note 1: Switching time test circuit & timing chart
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA2
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相关代理商/技术参数 |
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| MG150J7KS50 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA GTR Module Silicon N Channel IGBT |
| MG150J7KS60 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA GTR MODULE SILICON N CHANNEL IGBT |
| MG150J7KS61 | 功能描述:IGBT MOD CMPCT 600V 150A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| MG150M2YK1 | 制造商:n/a 功能描述:IGBT Module |
| MG150M2YL1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MODULES |
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