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参数资料
| 型号： | MG50Q1ZS50 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 78 A, 1200 V, N-CHANNEL IGBT |
| 封装： | 2-94D7A, 5 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 531K |
| 代理商： | MG50Q1ZS50 |
MG50Q1ZS50
2001-08-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0
―
±500
nA
Collector cut-off current
ICES
VCE = 1200V, VGE = 0
―
1.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 50mA, VCE = 5V
3.0
―
6.0
V
Tj = 25°C
―
2.8
3.6
Collector-emitter
saturation voltage
VCE (sat)
IC = 50A,
VGE = 15V
Tj = 125°C
―
3.1
4.0
V
Input capacitance
Cies
VCE = 10V, VGE = 0,
f = 1MHz
―
6.0
―
nF
Turn-on delay time
td (on)
―
0.05
―
Rise time
tr
―
0.05
―
Turn-on time
ton
―
0.2
―
Turn-off delay time
td (off)
―
0.5
―
Fall time
tf
―
0.1
0.3
Switching time
Turn-off time
toff
Inductive load
VCC = 600 V
IC = 50 A
VGE = ±15 V
RG = 24
(Note 1)
―
0.6
―
s
Reverse current
IR
VR = 1200 V
―
1.0
mA
Forward voltage
VF
IF = 50 A, VGE = 0
―
2.4
3.5
V
Reverse recovery time
trr
IF = 50 A, VGE = 10 V,
di / dt = 700 A / s
(Note 1)
―
0.1
0.25
s
Transistor stage
―
0.31
Thermal resistance
Rth (j-c)
Diode stage
―
0.94
°C / W
Note 1: Switching time and reverse recovery time test circuit & timing chart
相关PDF资料 |
PDF描述 |
|---|---|
| MG50Q2YK1 | 50 A, 900 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MG50Q2YS40 | 50 A, 1200 V, N-CHANNEL IGBT |
| MG50Q2YS50A | 78 A, 1200 V, N-CHANNEL IGBT |
| MG50Q2YS50 | 78 A, 1200 V, N-CHANNEL IGBT |
| MG50Q2YS50 | 78 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MG50Q2YK1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MODULES |
| MG50Q2YL1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MODULES |
| MG50Q2YS40 | 制造商:n/a 功能描述:IGBT Module |
| MG50Q2YS50 | 制造商:n/a 功能描述:IGBT Module |
| MG50Q2YS50A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
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