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参数资料
| 型号： | MG600J2YS61A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600 A, 600 V, N-CHANNEL IGBT |
| 封装： | 2-123C1B, 11 PIN |
| 文件页数： | 8/14页 |
| 文件大小： | 505K |
| 代理商： | MG600J2YS61A |
MG600J2YS61A
2003-08-21
3
Maximum Ratings (Ta
==== 25°C)
Stage
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
600
Collector current
1 ms
ICP
1200
A
DC
IF
600
Forward current
1 ms
IFM
1200
A
Inverter
Collector power dissipation (Tc
= 25°C)
PC
2770
W
Control voltage (OT)
VD
20
V
Fault input voltage
VFO
20
V
Control
Fault input current
IFO
20
mA
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40~125
°C
Operation temperature range
Tope
20~100
°C
Isolation voltage
Visol
2500 (AC 1 min)
V
Module
Screw torque
3 (M5)
Nm
Electrical Characteristics (Tj ==== 25°C)
1. Inverter Stage
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VGE = ±20 V, VCE = 0
+3/4
mA
Gate leakage current
IGES
VGE = +10 V, VCE = 0
100
nA
Collector cut-off current
ICES
VCE = 600 V, VGE = 0
1.0
mA
Gate-emitter cut-off voltage
VGE (off)
VCE = 5 V, IC = 600 mA
6.0
7.0
8.0
V
Tj = 25°C
2.2
2.5
Collector-emitter saturation voltage
VCE (sat)
VGE = 15 V,
IC = 600 A
Tj = 125°C
2.8
V
Input capacitance
Cies
VCE = 10 V, VGE = 0, f = 1 MHz
125
nF
Turn-on delay time
td (on)
0.10
1.00
Turn-off time
toff
2.00
Switching time
Fall time
tf
0.50
Reverse recovery time
trr
VCC = 300 V, IC = 600 A
VGE = ±15 V, RG = 5.1
(Note 1)
0.50
s
Forward voltage
VF
IF = 600 A
2.2
2.6
V
Note 1: Switching time test circuit & timing chart
2. Control (Tc ==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Fault output current
OC
VGE = 15 V
720
A
Over temperature
OT
100
125
°C
Fault output delay time
td (Fo)
VCC = 300 V, VGE = ±15 V
6.5
s
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PDF描述 |
|---|---|
| MG600Q1US41 | 600 A, 1200 V, N-CHANNEL IGBT |
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| MG75H2YS1 | 75 A, 500 V, N-CHANNEL IGBT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MG600Q1US41 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG600Q1US51 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG600Q1US59A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
| MG600Q1US61 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA IGBT Module Silicon N Channel IGBT |
| MG600Q2YS60A | 功能描述:IGBT MOD CMPCT 1200V 600A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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