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参数资料
| 型号： | MG600Q2YS60A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 封装： | 2-126A2A, 11 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 333K |
| 代理商： | MG600Q2YS60A |
MG600Q2YS60A
2003-08-21
3
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector
emitter voltage
VCES
1200
V
Gate
emitter voltage
VGES
±20
V
Collector current
DC
IC
600
A
Forward current
DC
IF
600
A
Collector power dissipation
(Tc = 25°C)
PC
4300
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40~125
°C
Isolation voltage
VIsol
2500
(AC 1 min)
V
Terminal: M8
―
10
Nm
Screw torque
Mounting: M5
―
3
Nm
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0V
―
±10
A
Collector cut
off current
ICES
VCE = 1200V, VGE = 0
―
1
mA
Gate
emitter cutoff voltage
VGE(off)
IC = 600mA, VCE = 5V
6.0
6.7
8.0
V
Tj = 25°C
―
2.7
3.1
Collector
emitter saturation
voltage
VCE(sat)
IC = 600A
VGE = 15V
Tj = 125°C
―
3.2
3.5
V
Input capacitance
Cies
VCE = 10V, VGE = 0V,
f = 1MHz
―
41000
―
pF
Gate
emitter voltage
VGE
―
13
15
17
V
Gate resistance
RG
―
7.5
―
15
Turn
on delay time
td(on)
―
0.3
―
Rise time
tr
―
0.2
―
Turn
on time
ton
―
0.5
―
Turn
off delay time
td(off)
―
1.3
―
Fall time
tf
―
0.1
0.3
Switching
time
Turn
off time
toff
Inductive load
VCC = 600V
IC = 600A
VGE = ±15V
RG = 7.5
(Note)
―
1.4
―
s
Tj = 25°C
―
2.2
3.2
Forward voltage
VF
IF = 600A,
VGE = 0V
Tj = 125°C
―
2.0
―
V
Reverse recovery time
trr
IF = 600A, VGE = 15V
di / dt = 2000A / s
―
0.3
0.5
s
Transistor stage
―
0.029
Thermal resistance
Rth(jc)
Diode stage
―
0.056
°C / W
RTC operating current
Irtc
Tj = 25°C
1200
―
A
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