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参数资料
| 型号： | MG600Q2YS60A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 封装： | 2-126A2A, 11 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 333K |
| 代理商： | MG600Q2YS60A |
MG600Q2YS60A
2003-08-21
7
Rth(j-c) – tw
Pulse width tw (s)
T
rans
ie
nt
ther
m
al
re
si
st
anc
e
R
th(j
-c
)
(
°C
/
W
)
1
0.0005
0.001
0.01
0.1
10
0.01
1
0.1
0.001
Tc = 25°C
Diode stage
Transistor stage
trr, Irr – IF
P
eak
revers
erec
overy
c
urrent
I rr
(
A
)
Revers
erec
overy
t
im
e
t rr
(
ns
)
Forward crrent IF (A)
1000
10
0
200
300
600
100
400
500
trr
Irr
Common cathode
di / dt = 2000A /
s
VGE = 10V VCC = 600V
: Tj = 25°C
: Tj = 125°C
Edsw – IF
Forward crrent IF (A)
Revers
erec
overy
lo
ss
E
dsw
(
m
J)
10
1
0
200
300
600
1
100
400
500
Common cathode
di / dt = 2000A /
s
VGE = 10V
VCC = 600V
: Tj = 25°C
: Tj = 125°C
C – VCE
Collector-emitter voltage VCE (V)
Capac
itan
ce
C
(pF)
500000
300
0.01
3000
300000
1000
3
10
100
1
30
100000
0.03
30000
10000
0.1
0.3
Cies
Coes
Cres
Collector-emitter voltage VCE (V)
Short Circuit Soa
Col
le
ct
or
c
urrent
I C
(A
)
5000
0
1200
1600
1000
800
400
2000
3000
4000
RG = 7.5
VGE = ±15V
Tj
≤ 125°C
Gate resistance RG ()
Short Circuit
tw – RG
P
ul
se
w
idt
h
t w
(s
)
20
0
15
10
5
4
8
12
20
16
VCC = 950V
VGE =±15V
Tj = 25°C
Common emitter
VGE = 0
f = 1MHz
Tj = 25°C
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