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参数资料
| 型号： | MG800J2YS50A |
| 厂商： | Powerex Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD CMPCT 600V 800A |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 3V @ 15V，800A |
| 电流 - 集电极 (Ic)（最大）： | 800A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 93nF @ 10V |
| 功率 - 最大： | 2900W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
MG800J2YS50A
DUAL IGBTMOD?
COMPACT IGBT SERIES MODULE
800 AMPERES/600 VOLTS
ABSOLUTE MAXIMUM RATINGS, T j = 25°C unless otherwise speci?ed
Characteristics
COLLECTOR-EMITTER VOLTAGE
GATE-EMITTER VOLTAGE
COLLECTOR CURRENT (DC)
FORWARD CURRENT (DC)
COLLECTOR DISSIPATION (T C = 25°C)
POWER DEVICE JUNCTION TEMPERATURE
STORAGE TEMPERATURE
MOUNTING TORQUE, M5 MOUNTING SCREWS
MOUNTING TORQUE, M8 MAIN TERMINAL SCREWS
MODULE WEIGHT (TYPICAL)
ISOLATION VOLTAGE, AC 1 MINUTE, 60HZ SINUSOIDAL
Symbol
V CES
V GES
I C
I F
P C
T J
T STG
—
—
—
V ISO
MG800J2YS50A
600
±20
800
800
2900
-20 TO 150
-40 TO 125
27
88
680
2500
Units
VOLTS
VOLTS
AMPERES
AMPERES
WATTS
°C
°C
IN-LB
IN-LB
GRAMS
VOLTS
ELECTRICAL AND MECHANICAL CHARACTERISTICS, T j = 25°C unless otherwise speci?ed
Characteristics
GATE LEAKAGE CURRENT
COLLECTOR CUTOFF CURRENT
GATE-EMITTER CUTOFF VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
INPUT CAPACITANCE
GATE-EMITTER VOLTAGE
GATE RESISTANCE
INDUCTIVE LOAD
SWITCHING
TIMES
FORWARD VOLTAGE
REVERSE RECOVERY TIME
JUNCTION TO CASE THERMAL RESISTANCE
RTC OPERATING CURRENT
Symbol
I GES
I CES
V GE(OFF)
V CE(SAT)
C IES
V GE
R G
T D(ON)
T R
T ON
T D(OFF)
T F
T OFF
V F
T RR
R TH(J-C)Q
R TH(J-C)D
I RTC
Test Conditions
V GE = ±20V, V CE = 0V
V CE = 600V, V GE = 0V
I C = 800MA,V CE = 5V
V GE = 15V, I C = 800A, T J = 25°C
V GE = 15V, I C = 800A, T J = 125°C
V CE = 10V, V GE = 0V, F = 1MHZ
V CC = 300V, I C = 800A,
V GE = ±15V, R G = 4.7 Ω
I F = 800A, V GE = -10V, T J = 25°C
I F = 800A, V GE = -10V, T J = 125°C
I F = 800A, V GE = -10V, DI/DT = 2000A/μS
IGBT (PER 1/2 MODULE)
FWDI (PER 1/2 MODULE)
T J = 25°C
Min.
—
—
5.0
—
—
—
13.0
4.7
—
—
—
—
—
—
—
—
—
—
—
1600
Typ.
—
—
6.5
2.4
2.6
93000
15.0
—
0.3
0.25
0.55
0.85
0.15
1.05
2.3
2.1
—
—
—
—
Max.
±10
1.0
8.0
3.0
3.3
—
17.0
15.0
—
—
—
—
0.3
—
3.0
—
0.5
0.043
0.056
—
Units
μA
MA
VOLTS
VOLTS
VOLTS
PF
VOLTS
Ω
μS
μS
μS
μS
μS
μS
VOLTS
VOLTS
μS
°C/WATT
°C/WATT
AMPERES
2
7/05
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