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参数资料
| 型号： | MG800J2YS50A |
| 厂商： | Powerex Inc |
| 文件页数： | 5/6页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD CMPCT 600V 800A |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 3V @ 15V，800A |
| 电流 - 集电极 (Ic)（最大）： | 800A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 93nF @ 10V |
| 功率 - 最大： | 2900W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
MG800J2YS50A
DUAL IGBTMOD?
COMPACT IGBT SERIES MODULE
800 AMPERES/600 VOLTS
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
10 2
10 2
V CC = 300V
10 4
V GE = ±15V
R G = 4.7 ?
T j = 25°C
T j = 125°C
10 1
V CC = 300V
V GE = ±15V
R G = 4.7 ?
T j = 25°C
T j = 125°C
10 1
10 3
V CC = 300V
V GE = ±15V
I C = 800A
T j = 25°C
T j = 125°C
10 0
0
300
600
900
10 0
0
300
600
900
10 2
2
4
6
8
10
12
14
16
10 4
10 3
COLLECTOR CURRENT, I C , (AMPERES)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
V CC = 300V
V GE = ±15V
I C = 800A
T j = 25°C
T j = 125°C
10 3
10 2
COLLECTOR CURRENT, I C , (AMPERES)
REVERSE RECOVERY CURRENT
(TYPICAL)
V CC = 300V
V GE = ±15V
di/dt = 2000A/ μ s
T j = 25°C
T j = 125°C
10 3
10 2
GATE RESISTANCE, R G , ( ? )
REVERSE RECOVERY TIME
(TYPICAL)
V CC = 300V
V GE = ±15V
di/dt = 2000A/ μ s
T j = 25°C
T j = 125°C
10 2
2
4
6
8
10
12
14
16
10 1
0
200
400
600
800
10 1
0
200
400
600
800
GATE RESISTANCE, R G , ( ? )
REVERSE RECOVERY LOSS VS.
FORWARD CURRENT
(TYPICAL )
FORWARD CURRENT, I F , (AMPERES)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
FORWARD CURRENT, I F , (AMPERES)
REVERSE BIAS
SAFE OPERATION AREA
(TYPICAL)
10 2
V CC = 300V
10 6
10 4
V GE = -10V
di/dt = 2000A/ μ s
T j = 25°C
10 5
C ies
10 3
T j = 125°C
10 1
10 4
C oes
10 2
10 3
V GE = 0V
f = 1MHz
T j = 25°C
C res
10 1
V GE = ±15V
R G = 4.7 ?
T j ≤ 125°C
10 0
0
200
400
600
800
10 2
0 0
10 0
10 1
10 2
10 3
10 0
0
200
400
600
800
7/05
FORWARD CURRENT, I F , (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
5
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