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参数资料
| 型号： | MG800J2YS50A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 800 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-11 |
| 文件页数： | 3/9页 |
| 文件大小： | 171K |
| 代理商： | MG800J2YS50A |
MG800J2YS50A
2004-10-01
3/9
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
Collector current
DC
IC
800
A
Forward current
DC
IF
800
A
Collector power dissipation
(Tc
= 25°C)
PC
2900
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40~125
°C
Isolation voltage
VIsol
2500
(AC 1 min)
V
Terminal: M8
10
Nm
Screw torque
Mounting: M5
3
Nm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate Leakage current
IGES
VGE = ±20 V, VCE = 0 V
±10
A
Collector cut-off current
ICES
VCE = 600 V, VGE = 0 V
1
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 800 mA, VCE = 5 V
5.0
6.5
8.0
V
Tj = 25°C
2.4
3.0
Collector-emitter saturation voltage
VCE (sat)
IC = 800 A,
VGE = 15 V
Tj = 125°C
2.6
3.3
V
Input capacitance
Cies
VCE = 10 V, VGE = 0 V, f = 1 MHz
93000
pF
Gate-emitter voltage
VGE
13
15
17
V
Gate resistance
RG
4.7
15
td (on)
0.3
tr
0.25
ton
0.55
td (off)
0.85
tf
0.15
0.30
Switching time
toff
Inductive load
VCC = 300 V
IC = 800 A
VGE = ±15 V
RG = 4.7
(Note)
1.05
s
Tj = 25°C
2.3
3.0
Forward voltage
VF
IF = 800A,
VGE = 0V
Tj = 125°C
2.1
V
Reverse recovery time
trr
IF = 800 A, VGE = 10 V
di/dt
= 2000 A/s
0.5
s
Transistor stage
0.043
Thermal resistance
Rth (j-c)
Diode stage
0.056
C/W
RTC Operating current
Irtc
Tj = 25°C
1600
A
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