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参数资料
| 型号： | MGF0846G |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| 封装： | GF-7, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 140K |
| 代理商： | MGF0846G |
Mitsubishi Semiconductors < GaN HEMT >
MGF0846G
40 W GaN HEMT [ non-matched ]
Nov. / 2010
2
CSTG-XXXXX
0.0
0.5
1.0
1.5
10 15 20 25 30 35 40
Pin(dBm)
IDR
F
(A
)
0
5
10
15
20
25
30
35
40
45
50
P
o
(d
Bm
),
G
p(d
B)
0
10
20
30
40
50
60
70
80
90
100
Effi
ci
ency
(%)
Example of Circuit Schematic and Characteristics : f = 2.6 GHz
f=2.6GHz
VD=47V
IDQ=350mA
Ta=25deg.
Po
Effi
Gp
Example of circuit
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| MGF0906B | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0907B | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0904 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0904A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0904A_1 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0904A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0905 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
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