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参数资料
| 型号： | MGF0846G |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| 封装： | GF-7, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 140K |
| 代理商： | MGF0846G |
Mitsubishi Semiconductors < GaN HEMT >
MGF0846G
40 W GaN HEMT [ non-matched ]
Nov. / 2010
3
CSTG-XXXXX
S-parameters:
Condition: VD = 47 V, ID = 350 mA, Ta = 25 deg. C
S22
S12
S21
S11
Freq.
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(GHz)
103.9
0.756
-36.3
0.058
-68.5
0.500
78.8
0.906
8.2
113.1
0.733
-32.9
0.052
-60.5
0.530
83.8
0.902
7.8
120.9
0.731
-25.4
0.056
-51.5
0.570
91.5
0.899
7.4
127.9
0.735
-22.0
0.049
-43.6
0.600
99.5
0.894
7.0
133.2
0.751
-14.7
0.049
-33.8
0.630
110.9
0.887
6.6
137.2
0.742
-12.4
0.046
-25.5
0.658
119.4
0.891
6.2
139.3
0.740
-9.1
0.041
-18.1
0.695
126.8
0.894
5.8
142.1
0.715
-3.8
0.039
-10.9
0.728
130.9
0.901
5.4
144.5
0.702
-5.2
0.035
-4.8
0.793
134.5
0.908
5.0
147.7
0.682
-22.2
0.038
1.2
0.853
136.7
0.911
4.6
152.3
0.666
-19.0
0.036
7.4
0.945
140.7
0.907
4.2
158.0
0.644
1.3
0.048
15.3
1.051
144.3
0.894
3.8
162.8
0.635
11.6
0.034
25.6
1.206
151.1
0.905
3.4
168.0
0.628
-1.7
0.031
34.7
1.293
157.0
0.875
3.0
173.0
0.664
4.1
0.026
42.0
1.402
163.9
0.909
2.6
175.2
0.648
-1.2
0.033
52.0
1.675
168.3
0.897
2.2
178.4
0.632
6.7
0.029
59.5
1.992
174.0
0.903
1.8
178.5
0.632
9.1
0.027
66.6
2.433
176.6
0.893
1.4
-179.5
0.643
3.6
0.028
74.4
3.379
-176.4
0.910
1.0
-173.7
0.660
30.5
0.029
85.5
5.549
-173.6
0.966
0.6
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