参数资料
型号: MGF0909A
元件分类: 功率晶体管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封装: HERMETIC SEALED, GF-7, 2 PIN
文件页数: 2/3页
文件大小: 34K
代理商: MGF0909A
Mitsubishi Electric
June/2004
MGF0909A TYPICAL CHARACTERISTICS
Tc=0/25/50/75deg.C
0
5
10
15
20
25
30
35
40
45
0
10
20
30
40
Pin (dBm)
GLP(dB)
Pout(dBm)
0
10
20
30
40
50
60
70
80
90
PAE
(%)
TC=0deg
TC=25deg
TC=50deg
TC=75deg
Po
PAE
GP
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相关代理商/技术参数
参数描述
MGF0909A_1 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET
MGF0909A_11 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET(small signal gain stage)
MGF0910A 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET
MGF0910A_1 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET
MGF0910A_11 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)