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参数资料
| 型号： | MGF0911A |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-21, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 601K |
| 代理商： | MGF0911A |
MITSUBISHI SEMICONDUCTOR
GaAs FET
L, S BAND POWER GaAs FET
ID vs. VDS
DRAIN TO SOURCE VOLTAGE VDS(V)
0
2
5
0
4
8
VGS=-0.5V/Step
Ta=25C
TYPICAL CHARACTERISTICS
ID vs. VGS
GATE TO SOURCE VOLTAGE VGS(V)
-3
-2
0
4
8
12
0
VDS=3V
Ta=25C
1
3
4
12
-1
6
VGS=0V
PO &
ηadd vs. Pin
(f=2.3GHz)
INPUT POWER Pin(dBm)
0
35
25
35
VDS=10V
ID=2.6A
45
50
40
30
20
10
ηadd
0
Gp=11 10 9 dB
PO
GLP,P1dB, ID and
ηadd vs. VDS
(f=2.3GHz)
VDS(V)
6
39
8
20
10
ID=2.6A
13
ηadd
P1dB
12
11
10
41
37
40
GLP
20
30
40
Mitsubishi Electric
June/2004
相关PDF资料 |
PDF描述 |
|---|---|
| MGF0913A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0913A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0913A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0915A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0915A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0911A_1 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
| MGF0911A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0912A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0912A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0913A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
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