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参数资料
| 型号： | MGF0911A |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-21, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 601K |
| 代理商： | MGF0911A |
MITSUBISHI SEMICONDUCTOR
GaAs FET
L, S BAND POWER GaAs FET
0
+90
-90
S21 ,S12 vs. f.
0.1
S PARAMETERS (Ta=25C,VDS=10V,ID=2.6A)
Freq.
(GHz)
0.986
0.985
0.984
0.983
0.982
0.981
0.980
0.979
0.978
0.976
0.975
0.974
0.973
0.972
0.971
0.970
0.969
0.968
0.967
0.966
0.965
0.964
0.963
0.962
0.961
-167.3
-171.3
-174.3
-175.5
-172.1
-173.9
-175.3
-176.3
-176.9
-177.9
-178.2
-179.3
-179.8
179.5
178.6
176.7
175.9
175.1
174.1
173.1
172.3
171.2
170.2
168.7
167.6
166.3
2.046
1.833
1.515
1.356
1.233
1.128
1.033
0.970
0.919
0.878
0.845
0.811
0.788
0.771
0.754
0.653
0.638
0.635
0.625
0.628
0.634
0.635
0.646
0.642
0.651
91.2
87.9
86.1
83.6
84.0
81.1
79.7
77.8
75.8
73.6
71.6
69.4
67.8
65.8
64.1
63.1
60.9
59.0
56.3
54.2
52.3
51.3
48.9
46.3
44.0
41.0
0.008
0.010
0.011
0.012
0.013
0.015
0.016
0.017
0.018
0.019
0.020
0.022
0.023
0.024
0.025
0.027
0.028
0.029
44.1
44.2
44.6
44.9
45.3
45.8
46.4
46.8
47.0
47.3
47.6
48.0
48.4
48.9
49.2
49.6
49.9
50.4
50.7
51.0
51.2
51.6
51.9
52.3
52.5
52.7
0.913
0.911
0.909
0.907
0.904
0.902
0.898
0.895
0.889
0.883
0.875
0.865
0.858
0.850
0.843
0.837
0.833
0.829
0.826
0.823
0.820
0.818
0.816
0.814
0.812
0.811
-178.6
-179.9
178.6
178.2
177.7
176.6
175.7
176.6
176.0
175.6
175.2
175.0
174.6
173.6
173.4
172.6
174.1
173.6
172.9
171.0
170.3
168.8
167.1
165.7
164.6
162.7
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
S11
S21
S12
S22
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Ta=25C
VDS=10V
ID=2.6A
S11 ,S22 vs. f.
-j50
-j10
0
25
50
100
250
+j10
-j25
+j25
+j50
-j100
+j100
-j250
+j250
S22
S11
3.0GHz
K
MSG/MAG
(dB)
0.515
0.567
0.583
0.675
0.683
0.713
0.736
0.785
0.815
0.835
0.900
0.951
0.989
1.011
1.050
1.149
1.170
1.221
1.242
1.256
1.267
1.292
1.315
1.327
1.366
1.412
23.1
22.7
21.8
21.2
20.3
19.6
19.3
18.7
18.2
17.5
17.1
16.8
15.8
14.7
14.1
13.9
13.7
12.7
12.3
11.9
11.6
11.4
11.0
10.1
9.8
9.4
S12
3.0GHz
±180
0.2
3.0GHz
0.5GHz
3
4
2
1
0.5GHz
S21
0.5GHz
3.0GHz
I S21 I
5
Mitsubishi Electric
June/2004
相关PDF资料 |
PDF描述 |
|---|---|
| MGF0913A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0913A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0913A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0915A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0915A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0911A_1 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
| MGF0911A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0912A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0912A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0913A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
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