- 您现在的位置：买卖IC网 > PDF目录182058 > MGF0912A S BAND, GaAs, N-CHANNEL, RF POWER, JFET PDF资料下载
参数资料
| 型号： | MGF0912A |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, GF-7, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 24K |
| 代理商： | MGF0912A |
Mitsubishi Electric
June/2004
MGF0912A TYPICAL CHARACTERISTICS
MGF0912A
S PARAMETERS
(Ta=25
°C,VD=10V,ID=2.6A)
Po,Gp,PAE vs. Pi
5
10
15
20
25
30
35
40
45
5
15
25
35
Pi (dBm)
GP(dB)
Po
(dBm)
0
10
20
30
40
50
60
70
80
PAE
(%)
VD=10V
ID(Rfoff)=2.6A
f=1.9GHz
Po
PAE
Gp
IM3 vs.Pi
-10
0
10
20
30
40
50
5
15
25
35
Pi (SCL)(dBm)
Po(SCL)
(dBm)
-70
-60
-50
-40
-30
-20
-10
IM3
(dBc)
f1=1.90GHz
f2=1.91GHz
Po
IM3
freq
K
MAG/MSG
(MHz)
MAG
Ang(deg)
MAG
Ang(deg)
MAG
Ang(deg)
MAG
Ang(deg)
(dB)
600
0.973
-169.11
1.885
88.28
0.008
56.40
0.889
177.56
0.99
23.59
800
0.973
-173.29
1.481
83.73
0.009
56.96
0.889
176.12
1.05
20.56
1000
0.972
-176.33
1.183
79.70
0.010
57.05
0.888
174.92
1.13
18.47
1200
0.972
-178.59
0.968
76.03
0.011
56.95
0.887
173.85
1.22
16.75
1400
0.971
179.63
0.818
72.61
0.011
56.87
0.885
172.81
1.31
15.30
1600
0.970
178.09
0.717
69.30
0.012
56.93
0.884
171.72
1.39
14.12
1800
0.969
176.58
0.650
66.02
0.013
57.20
0.882
170.52
1.45
13.16
2000
0.968
174.95
0.606
62.68
0.014
57.66
0.881
169.15
1.47
12.38
2200
0.967
173.08
0.574
59.21
0.015
58.24
0.880
167.56
1.46
11.70
2400
0.966
170.91
0.548
55.57
0.017
58.78
0.878
165.75
1.45
11.05
2600
0.965
168.42
0.521
51.73
0.020
59.06
0.877
163.68
1.42
10.39
2800
0.964
165.64
0.493
47.66
0.022
58.77
0.876
161.38
1.40
9.68
3000
0.963
162.65
0.461
43.37
0.025
57.56
0.875
158.86
1.38
8.94
S11
S21
S12
S22
相关PDF资料 |
PDF描述 |
|---|---|
| MGF0919A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGF0919A | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGF0919A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGF1902B | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGF1952A-01 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0912A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0913A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
| MGF0913A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0915A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET |
| MGF0915A_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET |
发布紧急采购，3分钟左右您将得到回复。