参数资料
型号: MGF0918A-01
元件分类: 功率晶体管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封装: HERMETIC SEALED, SMD, 3 PIN
文件页数: 2/4页
文件大小: 43K
代理商: MGF0918A-01
Mitsubishi Electric
June/2004
MGF0918A TYPICAL CHARACTERISTICS
VDS=6V
ID=0.1A
f=1.9GHz
Po,Gp,PAE vs.Pin
0
5
10
15
20
25
30
35
-10
-5
0
5
10
15
Pin(dBm)
Po(dBm)
0
10
20
30
40
50
60
70
Gp(dB),PAE(%)
Vds=10V
Id(off)=150mA
f=1.9GHz
Po
Gp
PAE
Pi(SCL) vs.Po(SCL),IM3
-20
-15
-10
-5
0
5
10
15
20
25
30
-20
-15
-10
-5
0
5
10
15
Pin(SCL)(dBm)
Po(SCL)(dBm)
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
IM3(dBc)
VD=10V
ID=150mA
f1=1.90GHz
f2=1.91GHz
Po
IM3
相关PDF资料
PDF描述
MGF0918A S BAND, GaAs, N-CHANNEL, RF POWER, JFET
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MGF0920A-03 S BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGF0952P S BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGF0953P S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
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