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参数资料
| 型号： | MGF0920A-03 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, SMD, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 44K |
| 代理商： | MGF0920A-03 |
Mitsubishi Electric
June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0920A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0920A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm
High power gain
Gp=18dB(TYP.) @f=1.9GHz
High power added efficiency
ηadd=45%(TYP.) @f=1.9GHz,Pin=15dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=400mA
Rg=200
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings
(Ta=25
°C)
Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
1500
mA
IGR
Reverse gate current
-3.6
mA
IGF
Forward gate current
15
mA
PT
Total power dissipation
8.3
W
Tch
Cannel temperature
175
°C
Tstg
Storage temperature
-65 to +175
°C
Electrical characteristics
(Ta=25
°C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
1000
1500
mA
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=3.0mA
-1.0
-
-5.0
V
gm
Transconductance
VDS=3V,ID=400mA
-
370
-
mS
Po
Output power
VDS=10V,ID=400mA,f=1.9GHz
30
32
-
dBm
ηadd
Power added Efficiency
Pin=15dBm
-
35
-
%
GLP
Linear Power Gain
VDS=10V,ID=400mA,f=1.9GHz
16
18
-
dB
Rth(ch-c)
Thermal Resistance
*1
Vf Method
-
13
18
°C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Fig.1
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