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参数资料
| 型号： | MGF0920A-03 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, SMD, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 44K |
| 代理商： | MGF0920A-03 |
Mitsubishi Electric
June/2004
MGF0920A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pi
0
5
10
15
20
25
30
35
-10
-5
0
5
10
15
20
Pin(dBm)
Po(dBm)
0
10
20
30
40
50
60
70
Gp(dB),PAE(%)
Vds=10V
Id(off)=400mA
f=1.9GHz
Po
Gp
PAE
Pi(SCL) vs.Po(SCL),IM3
-10
-5
0
5
10
15
20
25
30
35
40
-15
-10
-5
0
5
10
15
20
Pin(SCL)(dBm)
Po(SCL)(dBm)
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
IM3(dBc)
VD=10V
ID=400mA
f1=1.90GHz
f2=1.91GHz
Po
IM3
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相关代理商/技术参数 |
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|---|---|
| MGF0921A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0921A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0951P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET Plastic Mold Lead-less PKG |
| MGF0951P_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0952P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] |
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