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参数资料
| 型号： | MGF0918A |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, SMD, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 43K |
| 代理商： | MGF0918A |
Mitsubishi Electric
June/2004
MGF0918A
S PARAMETERS
(Ta=25
°C, VD=10V,ID=150mA, Reference Plane see Fig.1)
Fig.1 OUTLINE DRAWING
0.80
0.25
(1) Gate
(2) Drain
(3) Source
4.00
(2)
0.3
Gate Mark
Round corner
(1)
4.20
(2)
BACK SIDE PATTERN
2.5
(Unit:mm)
0.6
2.0
0.8
(1)
(3)
Gate Mark
2.8
1.20
Reference Plane
freq.
K
MAG/MSG
(MHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(dB)
600
0.966
-47.70
6.220
142.02
0.015
56.75
0.302
-56.49
0.21
26.18
1000
0.939
-72.11
5.269
120.98
0.021
41.10
0.360
-78.28
0.29
24.00
1400
0.919
-90.91
4.470
103.95
0.024
27.49
0.426
-94.16
0.36
22.70
1800
0.905
-105.49
3.805
89.91
0.026
15.71
0.492
-105.68
0.42
21.65
2200
0.897
-116.96
3.257
78.05
0.026
5.60
0.553
-114.07
0.49
20.98
2600
0.892
-126.16
2.811
67.78
0.025
-3.00
0.606
-120.27
0.60
20.51
3000
0.890
-133.71
2.453
58.64
0.024
-10.20
0.651
-125.02
0.70
20.09
3400
0.889
-140.07
2.168
50.31
0.024
-16.12
0.687
-128.82
0.76
19.56
3800
0.888
-145.57
1.946
42.56
0.023
-20.89
0.716
-132.05
0.86
19.27
4200
0.886
-150.45
1.775
35.21
0.023
-24.64
0.738
-134.94
0.93
18.87
4600
0.883
-154.92
1.647
28.16
0.022
-27.52
0.754
-137.64
1.07
17.15
5000
0.877
-159.19
1.553
21.31
0.023
-29.72
0.768
-140.24
1.10
16.35
5400
0.868
-163.52
1.489
14.56
0.024
-31.42
0.779
-142.75
1.15
15.58
5800
0.856
-168.29
1.448
7.83
0.025
-32.85
0.788
-145.19
1.20
14.90
6200
0.840
-173.99
1.427
1.01
0.027
-34.23
0.797
-147.53
1.20
14.51
6600
0.820
177.60
1.423
-6.02
0.029
-35.84
0.806
-149.77
1.18
14.33
7000
0.797
172.89
1.433
-13.41
0.031
-37.92
0.814
-151.90
1.21
13.88
7400
0.771
162.95
1.457
-21.33
0.035
-40.74
0.820
-153.92
1.12
14.06
7800
0.743
154.14
1.491
-29.97
0.038
-44.55
0.824
-155.84
1.12
13.86
8200
0.713
146.69
1.536
-39.52
0.042
-49.58
0.824
-157.68
1.13
13.40
8600
0.674
137.66
1.587
-50.18
0.047
-56.03
0.818
-159.47
1.19
12.62
9000
0.618
123.53
1.643
-62.15
0.053
-64.03
0.806
-161.21
1.27
11.77
9400
0.545
102.00
1.699
-75.56
0.058
-73.66
0.786
-162.88
1.40
10.90
9800
0.485
73.05
1.748
-90.54
0.064
-84.89
0.759
-164.44
1.47
10.32
10200
0.475
39.23
1.782
-107.10
0.071
-97.58
0.723
-165.75
1.45
10.00
10600
0.535
5.13
1.788
-125.18
0.077
-111.47
0.678
-166.62
1.38
10.00
11000
0.640
-23.88
1.753
-144.56
0.082
-126.11
0.636
-166.73
1.22
10.44
11400
0.730
-43.68
1.656
-164.88
0.086
-140.87
0.609
-165.59
1.15
10.47
11800
0.813
-54.21
1.473
177.63
0.088
-154.90
0.607
-162.55
1.14
9.96
12200
0.876
-63.08
1.176
160.67
0.087
-167.09
0.636
-156.74
1.19
8.65
S11
S21
S12
S22
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0918A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET |
| MGF0918A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0919A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
| MGF0919A_05 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
| MGF0919A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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