型号: | MGFC40V7177A-51 |
元件分类: | 功率晶体管 |
英文描述: | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
文件页数: | 1/2页 |
文件大小: | 82K |
代理商: | MGFC40V7177A-51 |
相关PDF资料 |
PDF描述 |
---|---|
MGFC40V7177A-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC40V7177A | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC40V7177B-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC40V7177B-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC40V7177B | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
---|---|
MGFC40V7177B | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V7785 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V7785A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V7785B | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC41V3642 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |