型号: | MGFC40V7177B |
元件分类: | 功率晶体管 |
英文描述: | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
封装: | HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN |
文件页数: | 1/2页 |
文件大小: | 49K |
代理商: | MGFC40V7177B |
相关PDF资料 |
PDF描述 |
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MGFC40V7785A-01 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC40V7785A-51 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC40V7785A | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC40V7785B-01 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC41V3642-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
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MGFC40V7785 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V7785A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V7785B | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC41V3642 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |
MGFC41V3642_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |