| 型号: | MGFC40V7785B-01 |
| 元件分类: | 功率晶体管 |
| 英文描述: | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 文件页数: | 1/2页 |
| 文件大小: | 87K |
| 代理商: | MGFC40V7785B-01 |

相关PDF资料 |
PDF描述 |
|---|---|
| MGFC41V3642-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC41V3642-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC41V3642 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC41V5964 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC41V6472 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC41V3642 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V3642_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V5964 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V5964_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V6472 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |