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参数资料
| 型号： | MGFC41V5964 |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 1489K |
| 代理商： | MGFC41V5964 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V5964
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC41V5964 is an internally impedence matched
OUTLINE DRAWING
Unit: millimeters (inches)
GaAs power FET especially designed for use in 5.9 - 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high raliability.
FEATURES
Internally matched to 50ohm system
High output power
P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz
High power gain
GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
Eadd = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
APPLICATION
5.9 - 6.4GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10V
(1): GATE
ID = 3.4 A
(2): SOURCE (FLANGE)
Rg = 50(ohm)
Refer to Bias Procedure
GF-18
(3): DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
VGSO
Gate to source voltage
-15
V
ID
Drain current
12
A
IGR
Reverse gate current
-30
mA
IGF
Forward gate current
63
mA
PT
Total power dissipation *1
53.6
W
Tch
Channel temperature
175
DegreesC
Tstg
Storage temperature
-65 to +175
DegreesC
*1 : Tc=25 DegreesC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
Limits
Unit
Min
Typ
Max
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
12
A
gm
Transconductance
VDS = 3V , ID = 3.0A
-
3
-
S
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 30mA
-
-5
V
P1dB
Output power at 1dB gain
compression
40
41
-
dBm
GLP
Linear power gain
VDS = 10V , ID = 3.4A , f = 5.9 - 6.4 GHz
8.5
9.5
-
dB
Eadd
Power added efficiency
-
33
-
%
IM3 *2
3rd order IM distortion
-42
-45
-
dBc
Rth(ch-c)
Thermal resistance *1
Delta Vf method
-
2.8
C/W
*1 : Channel to case
*2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz
MITSUBISHI
ELECTRIC
4.
0+
/-
0.
4
1.
4
2M
IN
2.
4+
/-
0.
2
0.
1
17
.4
+
/-
0.
3
R1.25
2M
IN
0.6+/-0.15
(1)
24+/-0.3
20.4+/-0.2
13.4
(3)
8.
0+
/-
0.
2
R1.2
15
.8
(2)
June/2004
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC41V5964_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V6472 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V7177 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC42V3436 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC42V3436_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
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